AM29LV641DL90REF Spansion Inc., AM29LV641DL90REF Datasheet - Page 3
![Flash Memory IC](/photos/19/5/190562/4433883_sml.jpg)
AM29LV641DL90REF
Manufacturer Part Number
AM29LV641DL90REF
Description
Flash Memory IC
Manufacturer
Spansion Inc.
Datasheet
1.AM29LV641DL90REF.pdf
(57 pages)
Specifications of AM29LV641DL90REF
Memory Size
64Mbit
Memory Configuration
4M X 16
Ic Interface Type
Parallel
Access Time
90ns
Memory Case Style
TSOP
No. Of Pins
48
Mounting Type
Surface Mount
Peak Reflow Compatible (260 C)
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Am29LV640D/Am29LV641D
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only
Uniform Sector Flash Memory with VersatileIO™ Control
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
■ VersatileIO™ control
■ High performance
■ Manufactured on 0.23 µm process technology
■ CFI (Common Flash Interface) compliant
■ SecSi (Secured Silicon) Sector region
■ Ultra low power consumption (typical values at 3.0 V,
■ Flexible sector architecture
■ Sector Protection
■ Embedded Algorithms
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
— 3.0 to 3.6 volt read, erase, and program operations
— Device generates output voltages and tolerates data
— Access times as fast as 90 ns
— Provides device-specific information to the system,
— 128-word sector for permanent, secure identification
— May be programmed and locked at the factory or by
— Accessible through a command sequence
5 MHz)
— 9 mA typical active read current
— 26 mA typical erase/program current
— 200 nA typical standby mode current
— One hundred twenty-eight 32 Kword sectors
— A hardware method to lock a sector to prevent
— Sectors can be locked in-system or via programming
— Temporary Sector Unprotect feature allows code
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically writes
input voltages on the DQ input/outputs as determined
by the voltage on V
allowing host software to easily reconfigure for
different Flash devices
through an 8-word random Electronic Serial Number
the customer
program or erase operations within that sector
equipment
changes in previously locked sectors
preprograms and erases the entire chip or any
combination of designated sectors
and verifies data at specified addresses
DATA SHEET
IO
■ Compatibility with JEDEC standards
■ Minimum 1 million erase cycle guarantee per sector
■ Package options
■ Erase Suspend/Erase Resume
■ Data# Polling and toggle bits
■ Unlock Bypass Program command
■ Ready/Busy# pin (RY/BY#) (Am29LV640DU in FBGA
■ Hardware reset pin (RESET#)
■ WP# pin (Am29LV641DH/DL in TSOP,
■ ACC pin
■ Program and Erase Performance (V
— Pinout and software compatible with single-power
— Superior inadvertent write protection
— 48-pin TSOP (Am29LV641DH/DL only)
— 56-pin SSOP (Am29LV640DH/DL only)
— 63-ball Fine-Pitch BGA (Am29LV640DU only)
— 64-ball Fortified BGA (Am29LV640DU only)
— Suspends an erase operation to read data from, or
— or that is not being erased, then resumes the erase
— Provides a software method of detecting program or
— Reduces overall programming time when issuing
package only)
— Provides a hardware method of detecting program or
— Hardware method to reset the device for reading array
Am29LV640DH/DL in SSOP only)
— At V
— At V
— An internal pull up to V
— Accelerates programming time for higher throughput
the ACC input pin)
— Word program time: 11 µs typical
— Sector erase time: 0.9 s typical for each 32 Kword
supply Flash
program data to, a sect27
operation
erase operation completion
multiple program command sequences
erase cycle completion
data
regardless of sector protect/unprotect status
during system production
sector
IL
IH
, protects the first or last 32 Kword sector,
, allows removal of sector protection
Publication# 22366
Issue Date: January 22, 2007
CC
is provided
Rev: C Amendment 6
HH
not applied to