CAT5115ZI-00-GT3 ON Semiconductor, CAT5115ZI-00-GT3 Datasheet - Page 4

• Manufacturer Part Number: CAT5115ZI-00-GT3
• Description: DPP, 32 TAPS, U/D
• Manufacturer: ON Semiconductor

Specifications of CAT5115ZI-00-GT3

• Lead Free Status / Rohs Status: Compliant

3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
5. I
6. These parameters are periodically sampled and are not 100% tested.
Table 5. DC ELECTRICAL CHARACTERISTICS
POWER SUPPLY
LOGIC INPUTS
POTENTIOMETER CHARACTERISTICS
I
SB1
C
W
Symbol
TC
TC
H
= source or sink.
R
I
V
V
V
V
V
DNL
/C
(Note 4)
V
CC1
V
R
INL
I
I
V
I
RATIO
CC
IH
IH1
IH2
POT
RPOT
IL
IL1
IL2
fc
RH
W
RL
WI
N
L
/C
W
Operating Voltage Range
Supply Current (Increment)
Supply Current (Standby)
Input Leakage Current
Input Leakage Current
TTL High Level Input Voltage
TTL Low Level Input Voltage
CMOS High Level Input Voltage
CMOS Low Level Input Voltage
Potentiometer Resistance
Pot. Resistance Tolerance
Voltage on R
Voltage on R
Resolution
Integral Linearity Error
Differential Linearity Error
Wiper Resistance
Wiper Current
TC of Pot Resistance
Ratiometric TC
Noise
Potentiometer Capacitances
Frequency Response
Parameter
H
L
pin
pin
V
V
CS = V
U/D, INC = V
V
V
4.5 V ≤ V
2.5 V ≤ V
−10 Device
−50 Device
−00 Device
I
I
V
V
(1)
100 kHz / 1 kHz
Passive Attenuator, 10 kW
W
W
(V
CC
CC
IN
IN
CC
CC
http://onsemi.com
≤ 2 mA
≤ 2 mA
CC
= V
= 0 V
= 6 V, f = 1 MHz, I
= 6 V, f = 250 kHz, I
= 5 V, I
= 2.5 V, I
= +2.5 V to +6 V unless otherwise specified)
CC
CC
CC
CC
Conditions
− 0.3 V
W
≤ 5.5 V
≤ 6 V
4
CC
W
= 1 mA
= 1 mA
− 0.3 V or GND
W
W
= 0
= 0
V
CC
−0.3
Min
2.5
–
–
–
–
–
2
0
0
0
x 0.7
CC
+ 1 V.
8/8/25
0.01
Typ
0.25
8/24
100
150
±50
3.2
0.5
1.7
10
50
70
–
–
–
–
–
–
–
–
–
V
V
CC
CC
Max
±300
V
100
−10
V
V
6.0
0.8
±20
200
400
50
10
0.5
20
1
CC
1
1
+ 0.3
CC
CC
x 0.2
ppm/°C
ppm/°C
nV/√Hz
Units
MHz
LSB
LSB
mA
mA
mA
mA
mA
mA
kW
pF
V
V
V
V
V
%
%
W
W
V
V