CY14B101LA-BA45XIT Cypress Semiconductor Corp, CY14B101LA-BA45XIT Datasheet - Page 17
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CY14B101LA-BA45XIT
Manufacturer Part Number
CY14B101LA-BA45XIT
Description
CY14B101LA-BA45XIT
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY14B101LA-SP45XI.pdf
(26 pages)
Specifications of CY14B101LA-BA45XIT
Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY14B101LA-BA45XIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Truth Table For SRAM Operations
HSB must remain HIGH for SRAM operations
Notes
Document #: 001-42879 Rev. *K
Table 3. Truth Table for x8 Configuration
Table 4. Truth Table for x16 Configuration
43. Data DQ
44. BHE and BLE are applicable for x16 configuration only.
CE
CE
H
H
L
L
L
L
L
L
L
L
L
L
L
L
L
0
- DQ
WE
WE
7
H
H
X
X
H
H
H
H
H
H
X
L
L
L
L
for x8 configuration and Data DQ
OE
OE
X
X
H
H
H
X
X
X
L
L
L
H
X
X
L
BHE
High Z
Data Out (DQ
High Z
Data in (DQ
H
H
H
H
X
L
L
L
L
L
L
[44]
BLE
0
- DQ
H
H
H
H
0
X
L
L
L
L
L
L
Inputs/Outputs
–DQ
[44]
0
15
–DQ
for x16 configuration.
7
High Z
High Z
Data Out (DQ
Data Out (DQ
DQ
Data Out (DQ
DQ
High Z
High Z
High Z
Data In (DQ
Data In (DQ
DQ
Data In (DQ
DQ
);
7
);
8
0
8
0
Inputs/Outputs
–DQ
–DQ
–DQ
–DQ
15
7
15
7
in High Z
in High Z
[43]
in High Z
in High Z
0
0
8
–DQ
–DQ
–DQ
0
0
8
–DQ
–DQ
–DQ
15
7
15
);
15
7
15
[43]
)
);
);
)
);
Deselect/Power-down
Read
Output disabled
Write
Deselect/Power-down
Output disabled
Read
Read
Read
Output disabled
Output disabled
Output disabled
Write
Write
Write
Mode
Mode
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Standby
Active
Active
Active
CY14B101NA
CY14B101LA
Power
Power
Page 17 of 26
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