CY7C1360C-166BZI Cypress Semiconductor Corp, CY7C1360C-166BZI Datasheet - Page 26
![SRAM (Static RAM)](/photos/18/29/182916/165-fbga_sml.jpg)
CY7C1360C-166BZI
Manufacturer Part Number
CY7C1360C-166BZI
Description
SRAM (Static RAM)
Manufacturer
Cypress Semiconductor Corp
Datasheet
1.CY7C1360C-200AJXC.pdf
(34 pages)
Specifications of CY7C1360C-166BZI
Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
165-LFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY7C1360C-166BZI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Switching Waveforms
Notes
Document Number: 38-05540 Rev. *K
30. On this diagram, when CE is LOW: CE
31. The data bus (Q) remains in high Z following a write cycle, unless a new read access is initiated by ADSP or ADSC.
32. GW is HIGH.
Data Out (Q)
Data In (D)
ADDRESS
ADSP
ADSC
BWE,
ADV
BW
CLK
OE
CE
X
A1
High-Z
High-Z
t ADS
t CES
t AS
A2
t ADH
t CEH
t CH
t AH
Back-to-Back READs
t CYC
t CLZ
Q(A1)
t CL
t CO
(continued)
1
is LOW, CE
Q(A2)
t OEHZ
Figure 8. Read/Write Cycle Timing
2
is HIGH and CE
t WES
t DS
D(A3)
Single WRITE
A3
t DH
t WEH
DON’T CARE
A4
3
is LOW. When CE is HIGH: CE
t OELZ
UNDEFINED
Q(A4)
[30, 31, 32]
BURST READ
Q(A4+1)
1
is HIGH or CE
CY7C1360C, CY7C1362C
Q(A4+2)
2
is LOW or CE
Q(A4+3)
3
is HIGH.
D(A5)
A5
Back-to-Back
WRITEs
Page 26 of 34
D(A6)
A6
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