DSPIC33FJ16GP101-I/SS Microchip Technology, DSPIC33FJ16GP101-I/SS Datasheet - Page 66
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DSPIC33FJ16GP101-I/SS
Manufacturer Part Number
DSPIC33FJ16GP101-I/SS
Description
16-bit DSC Family, 16 MIPS, 16KB Flash, 1KB RAM 20 SSOP .209in TUBE
Manufacturer
Microchip Technology
Series
dsPIC™ 33Fr
Datasheet
1.DSPIC33FJ16GP101-IP.pdf
(322 pages)
Specifications of DSPIC33FJ16GP101-I/SS
Processor Series
dsPIC33F
Core
dsPIC
Data Bus Width
16 bit
Program Memory Type
Flash
Program Memory Size
16 KB
Interface Type
SPI, I2C, UART, JTAG
Number Of Programmable I/os
35
Operating Supply Voltage
3.3 V
Maximum Operating Temperature
+ 85 C
Development Tools By Supplier
MPLAB IDE Software
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 13 Channel
Core Processor
dsPIC
Core Size
16-Bit
Speed
16 MIPs
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
13
Eeprom Size
-
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SSOP (0.209", 5.30mm Width)
Lead Free Status / Rohs Status
Details
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dsPIC33FJ16GP101/102 AND dsPIC33FJ16MC101/102
5.2
The
dsPIC33FJ16MC101/102 Flash program memory
array is organized into rows of 64 instructions or 192
bytes. RTSP allows the user application to erase a
page of memory, which consists of eight rows (512
instructions); and to program one word.
shows typical erase and programming times. The 8-
row erase pages are edge-aligned from the beginning
of program memory, on boundaries of 1536 bytes.
5.3
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode. The processor stalls (waits) until the operation is
finished.
For erase and program times, refer to parameters
DI37a and DI37b (Page Erase Time), and DI38a and
DI38b (Word Write Cycle Time), in
Characteristics: Program
Setting the WR bit (NVMCON<15>) starts the opera-
tion, and the WR bit is automatically cleared when the
operation is finished.
5.3.1
Programmers can program one word (24 bits) of
program Flash memory at a time. To do this, it is
necessary to erase the 8-row erase page that contains
the desired address of the location the user wants to
change.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
application must wait for the programming time until
programming is complete. The two instructions
following the start of the programming sequence
should be NOPs.
Refer to Section 5. “Flash Programming” (DS70191)
in the “dsPIC33F/PIC24H Family Reference Manual”
for details and codes examples on programming using
RTSP.
DS70652C-page 66
Note:
RTSP Operation
Programming Operations
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
Performing a page erase operation on the
last page of program memory will clear the
Flash
enabling code protection as a result.
Therefore, users should avoid performing
page erase operations on the last page of
program memory.
dsPIC33FJ16GP101/102
Configuration
Memory”.
words,
Table
Table 26-12
26-12:
thereby
“DC
and
Preliminary
5.4
Two SFRs are used to read and write the program
Flash memory: NVMCON and NVMKEY.
The NVMCON register
blocks are to be erased, which memory type is to be
programmed, and the start of the programming cycle.
NVMKEY is a write-only register that is used for write
protection. To start a programming or erase sequence,
the user application must consecutively write 0x55 and
0xAA to the NVMKEY register. Refer to
“Programming Operations”
Control Registers
© 2011 Microchip Technology Inc.
(Register
for further details.
5-1) controls which
Section 5.3
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