BZX284-B16,115 NXP Semiconductors, BZX284-B16,115 Datasheet - Page 4

• Manufacturer Part Number: BZX284-B16,115
• Description: DIODE ZENER 16V 400MW SOD110
• Manufacturer: NXP Semiconductors

Specifications of BZX284-B16,115

• Voltage - Zener (nom) (vz): 16V
• Voltage - Forward (vf) (max) @ If: 1.1V @ 100mA
• Current - Reverse Leakage @ Vr: 50nA @ 11.2V
• Tolerance: ±2%
• Power - Max: 400mW
• Impedance (max) (zzt): 20 Ohm
• Mounting Type: Surface Mount
• Package / Case: SOD-110
• Operating Temperature: -65°C ~ 150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934040430115; BZX284-B16 T/R; BZX284-B16 T/R

Table 1 Per type BZX284-B/C2V4 to B/C24
T
BZX284-
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
13
15
16
18
20
22
24
j
= 25 °C unless otherwise specified.
Bxxx
Cxxx
2.35
2.65
2.94
3.23
3.53
3.82
4.21
4.61
5.00
5.49
6.08
6.66
7.35
8.04
8.92
9.80
10.80
11.80
12.70
14.70
15.70
17.60
19.60
21.60
23.50
Tol. ±2% (B)
MIN.
WORKING VOLTAGE
at I
2.45
2.75
3.06
3.37
3.67
3.98
4.39
4.79
5.20
5.71
6.32
6.94
7.65
8.36
9.28
10.20
11.20
12.20
13.30
15.30
16.30
18.40
20.40
22.40
24.50
MAX.
Ztest
V
Z
(V)
= 5 mA
2.2
2.5
2.8
3.1
3.4
3.7
4.0
4.4
4.8
5.2
5.8
6.4
7.0
7.7
8.5
9.4
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
Tol. ±5% (C)
MIN.
2.6
2.9
3.2
3.5
3.8
4.1
4.6
5.0
5.4
6.0
6.6
7.2
7.9
8.7
9.6
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
MAX.
275
300
325
350
375
400
410
425
400
80
40
30
15
20
20
20
25
25
25
25
25
25
30
30
30
at I
TYP.
DIFFERENTIAL RESISTANCE
Ztest
= 1 mA
400
450
500
500
500
500
600
500
480
400
150
80
80
80
100
150
150
150
170
200
200
225
225
250
250
MAX.
r
dif
(Ω)
70
75
80
85
85
85
80
50
40
15
6
6
2
2
2
2
2
2
2
3
4
4
4
5
6
at I
TYP.
Ztest
= 5 mA
100
100
95
95
90
90
90
80
60
40
10
15
10
10
10
10
10
10
10
15
20
20
20
25
30
MAX.
−1.6
−2.0
−2.1
−2.4
−2.4
−2.5
−2.5
−1.4
−0.8
1.2
2.3
3.0
4.0
4.6
5.5
6.4
7.4
8.4
9.4
11.4
12.4
14.4
16.4
18.4
20.4
(see Figs 3 and 4)
TEMP. COEFF.
at I
S
Ztest
Z
TYP.
(mV/K)
= 5 mA
450
440
425
410
390
370
350
325
300
275
250
215
170
150
120
110
108
105
103
99
97
93
88
84
80
at f = 1 MHz;
DIODE CAP.
V
C
R
MAX.
d
= 0 V
(pF)
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
12.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
1.5
1.5
1.5
1.25
1.25
NON-REPETITIVE PEAK
I
REVERSE CURRENT
ZSM
(A) at t
T
amb
MAX.
= 25 °C
p
= 100 μs;