MM908E625ACDWB Freescale Semiconductor, MM908E625ACDWB Datasheet - Page 32
MM908E625ACDWB
Manufacturer Part Number
MM908E625ACDWB
Description
IC QUAD HALF BRDG MCU/LIN 54SOIC
Manufacturer
Freescale Semiconductor
Datasheets
1.MM908E625.pdf
(48 pages)
2.MM908E625ACDWB.pdf
(48 pages)
3.MM908E625ACDWB.pdf
(48 pages)
4.MM908E625ACDWB.pdf
(48 pages)
5.MM908E625ACDWB.pdf
(40 pages)
Specifications of MM908E625ACDWB
Applications
Automotive Mirror Control
Core Processor
HC08
Program Memory Type
FLASH (16 kB)
Controller Series
908E
Ram Size
512 x 8
Interface
SCI, SPI
Number Of I /o
13
Voltage - Supply
8 V ~ 18 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
54-SOIC (0.300", 7.50mm Width) Exposed Pad
Program Memory Size
16 KB
Number Of Programmable I/os
54
Number Of Timers
16
Operating Supply Voltage
- 18 V to + 28 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MM908E625ACDWB
Manufacturer:
FREESCALE Semiconductor
Quantity:
26
HALF-BRIDGES
output stages. The half-bridges can be used in H-Bridge,
high-side, or low-side configurations.
HALF-BRIDGE CONTROL
general enable of the circuitry is done by setting PSON in the
System Control Register (SYSCTL). HBx_L and HBx_H form
one half-bridge. It is not possible to switch on both MOSFETs
in one half-bridge at the same time. If both bits are set, the
high-side MOSFET has a higher priority.
half-bridge being on at the same time, a break-before-make
circuit exists. Switching the high-side MOSFET on is inhibited
as long as the potential between gate and V
certain threshold. Switching the low-side MOSFET on is
blocked as long as the potential between gate and source of
the high-side MOSFET did not fall below a certain threshold.
32
908E625
FUNCTIONAL DEVICE OPERATION
LOGIC COMMANDS AND REGISTERS
• 1 = Hall-effect sensor input terminal current above
• 0 = Hall-effect sensor input terminal current below
Outputs HB1:HB4 provide four low-resistive half-bridge
Each output MOSFET can be controlled individually. The
To avoid both MOSFETs (high side and low side) of one
threshold
threshold
Control
Figure 17. Half-Bridge Push-Pull Output Driver
Current
On/Off
On/Off
Status
BEMF
Status
Limit
SS
is not below a
Overtemperature Protection,
Overcurrent Protection
Overcurrent Protection
High-Side Driver
Low-Side Driver
Current Limitation,
Current Recopy,
Charge Pump,
(HBOUT) owing to the fact that all half-bridge outputs are
switched off.
HALF-BRIDGE OUTPUT REGISTER (HBOUT)
Reset clears the HBx_L bits.
Low-Side On/Off Bits (HBx_L)
Reset
Write
Read HB4
Bits
Reset clears all bits in the H-Bridge Output Register
HB1:HB4 output features:
• Short circuit (overcurrent) protection on high-side and
• Current recopy feature (low side MOSFET)
• Overtemperature protection
• Overvoltage and undervoltage protection
• Current limitation feature (low side MOSFET)
These read/write bits turn on the low-side MOSFETs.
low-side MOSFETs
H
7
0
Register Name and Address: HBOUT - $01
_
HB4
6
L
0
_
HB3
Analog Integrated Circuit Device Data
H
5
0
_
HB3
4
L
0
_
VSUP
GND
HB2
Freescale Semiconductor
H
3
0
_
HB2
2
L
0
_
HB1
H
1
0
_
HBx
HB1
0
L
0
_