MAC8D ON Semiconductor, MAC8D Datasheet - Page 5

• Manufacturer Part Number: MAC8D
• Description: Triacs THY 8A 400V TRIAC
• Manufacturer: ON Semiconductor

Specifications of MAC8D

• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Breakover Current Ibo Max: 80 A
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 40 mA
• Forward Voltage Drop: 1.6 V @ 11 A
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Repetitive Peak Forward Blocking Voltage: 400 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
10
-50
5000
1
4.5K
3.5K
2.5K
1.5K
500
4K
3K
2K
1K
1K 1K
0
1
-30
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
Figure 6. Gate Trigger Current Variation
I
TM
ADJUST FOR
Q1
Figure 8. Critical Rate of Rise of Off‐State
R
, 60 Hz V
G
200 V
-10
, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
Q2
CHARGE
T
RMS
J
, JUNCTION TEMPERATURE ( C)
AC
10
Voltage (Exponential)
10
TRIGGER
30
Note: Component values are for verification of rated (di/dt)
Q3
MT2 POSITIVE
50
CONTROL
NON‐POLAR
CHARGE
70
100
MT2 NEGATIVE
90
C
MAC8D, MAC8M, MAC8N
L
110
http://onsemi.com
130
1000
5
L
1N914
L
0.95
0.85
0.65
0.55
0.45
075
100
0.9
0.8
0.7
0.6
0.5
0.4
10
c
-50
1
1
. See AN1048 for additional information.
10
MEASURE
51 W
T
(di/dt)
V
J
DRM
I
= 125 C
-30
15
MT2
Figure 7. Gate Trigger Voltage Variation
t
w
G
c
, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 9. Critical Rate of Rise of
- 10
MT1
f =
20
(di/dt)
Q2
2 t
1
Q1
T
w
c
Q3
J
=
, JUNCTION TEMPERATURE ( C)
Commutating Voltage
25
6f I
1000
10
TM
30
100 C
30
1N4007
35
50
-
+
40
70
200 V
45
90
75 C
50
110
55
130
60