VSKTF200-12HKP Vishay, VSKTF200-12HKP Datasheet - Page 3

• Manufacturer Part Number: VSKTF200-12HKP
• Description: SCR Modules 200 Amp 1200 Volt 444 Amp IT(RMS)
• Manufacturer: Vishay

Specifications of VSKTF200-12HKP

• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 50 mA
• Holding Current (ih Max): 6000 mA
• Mounting Style: Screw
• Package / Case: MAGN-A-PAK
• Breakover Current Ibo Max: 8000 A
• Gate Trigger Current (igt): 200 mA
• Gate Trigger Voltage (vgt): 3 V
• Repetitive Peak Forward Blocking Voltage: 1200 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94422
Revision: 19-Jul-10
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
Maximum recovery time
Maximum turn-off time
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
RMS insulation voltage
Maximum peak reverse and off-state
leakage current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum peak average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
Mounting torque ± 10 %
Approximate weight
Case style
[e-mail], [e-mail],
MAP to heatsink
For technical questions within your region, please contact one of the following:
busbar to MAP
Fast Thyristor/Diode and Thyristor/Thyristor
(MAGN-A-PAK Power Modules), 200 A
SYMBOL
SYMBOL
SYMBOL
SYMBOL
R
P
dV/dt
R
I
dI/dt
I
P
-V
V
V
T
RRM
V
thC-hs
DRM
I
I
I
G(AV)
GM
T
thJC
GD
t
GT
t
INS
GM
Stg
GT
GD
rr
q
GT
J
,
DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended. The
torque should be rechecked after a period of 3 hours
to allow for the spread of the compound. Use of
cable lugs is not recommended, busbar should be
used and restrained during tightening. Threads must
be lubricated with a compound.
T
50 Hz, circuit to base, T
T
f = 50 Hz, d% = 50
T
T
T
T
Gate drive 20 V, 20 , t
T
I
I
V
TM
TM
J
J
J
J
J
J
J
R
= 125 °C, f = 50 Hz, d% = 50
= 125 °C, t
= 125 °C, exponential to 67 % V
= 125 °C, rated V
= 25 °C, V
= 125 °C, rated V
= 25 °C
= 50 V; dV/dt = 400 V/μs linear to 80 % V
= 750 A; T
= 350 A, dI/dt = - 25 A/μs, V
ak
p
J
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
 5 ms
12 V, Ra = 6
= T
J
DRM
DRM
maximum; dI/dt = - 25 A/μs;
[e-mail]
r
J
/V
applied
 1 ms, V
= 25 °C, t = 1 s
RRM
applied
R
= 50 V, T
D
DRM
= 80 % V
Vishay Semiconductors
VSK.F200..P Series
J
= 25 °C
DRM
DRM
,
- 40 to 125
- 40 to 150
(35 to 53)
VALUES
VALUES
VALUES
20
0.125
0.025
4 to 6
K
1000
3000
17.8
VALUES
0.25
500
200
60
10
10
20
50
5
3
MAGN-A-PAK
800
2
www.vishay.com
25
J
(lbf · in)
UNITS
UNITS
UNITS
N · m
V/μs
K/W
mA
mA
mA
oz.
UNITS
°C
W
A
V
V
V
g
V
A/μs
μs
3