absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
electrical characteristics at 25°C case temperature (unless otherwise noted )
† All voltages are with respect to Main Terminal 1.
NOTE
DECEMBER 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage (see Note 1)
Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2)
Peak on-state surge current full-sine-wave at (or below) 25°C case temperature (see Note 3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
I
V
V
DRM
GT
GT
T
●
●
●
●
●
R O D U C T
High Current Triacs
12 A RMS
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
4: This parameter must be measured using pulse techniques, t
PARAMETER
Repetitive peak
off-state current
Gate trigger
current
Gate trigger
voltage
On-state voltage
the rate of 300 mA/°C.
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
the current carrying contacts are located within 3.2 mm from the device body.
GT
of 50 mA (Quadrants 1 - 3)
I N F O R M A T I O N
V
V
V
V
V
V
V
V
V
I
TM
D
supply
supply
supply
supply
supply
supply
supply
supply
= Rated V
= ±17 A
= +12 V†
= +12 V†
= -12 V†
= -12 V†
= +12 V†
= +12 V†
= -12 V†
= -12 V†
RATING
DRM
I
R
R
R
R
R
R
R
R
I
TEST CONDITIONS
G
G
L
L
L
L
L
L
L
L
= 0
= 50 mA
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
= 10 Ω
p
= ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
MT2
MT1
G
Pin 2 is in electrical contact with the mounting base.
T
t
t
t
t
t
t
t
t
(see Note 4)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
p(g)
TIC236M
TIC236D
TIC236S
TIC236N
C
= 110°C
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
> 20 µs
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
I
T(RMS)
V
I
T
I
TSM
T
DRM
GM
T
stg
C
L
MIN
1
2
3
SILICON TRIACS
TYP
±1.4
-0.8
-0.8
-40 to +110
-40 to +125
-19
-16
0.8
0.9
12
34
TIC236 SERIES
VALUE
400
600
700
800
100
230
±1
12
MAX
±2.1
-50
-50
±2
50
-2
-2
2
2
MDC2ACA
UNIT
UNIT
mA
mA
°C
°C
°C
V
A
A
A
V
V
1