TIC106M-S Bourns Inc., TIC106M-S Datasheet

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TIC106M-S

Manufacturer Part Number
TIC106M-S
Description
SCRs 600V 5A SCR
Manufacturer
Bourns Inc.
Datasheet

Specifications of TIC106M-S

Breakover Current Ibo Max
30 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.4 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
1 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
Through Hole
Package / Case
TO-220
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply when the gate-cathode resistance R
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Repetitive peak off-state voltage (see Note 1)
Repetitive peak reverse voltage
Continuous on-state current at (or below) 80°C case temperature (see Note 2)
Average on-state current (180° conduction angle) at (or below) 80°C case temperature
(see Note 3)
Surge on-state current at (or below) 25°C (see Note 4)
Peak positive gate current (pulse width ≤ 300 µs)
Peak gate power dissipation (pulse width ≤ 300 µs)
Average gate power dissipation (see Note 5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
R O D U C T
5 A Continuous On-State Current
30 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80°C derate
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
5. This value applies for a maximum averaging time of 20 ms.
linearly to zero at 110°C.
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
GT
of 200 µA
I N F O R M A T I O N
RATING
GK
= 1 kΩ.
G
A
K
Pin 2 is in electrical contact with the mounting base.
TIC106M
TIC106M
SILICON CONTROLLED RECTIFIERS
TIC106D
TIC106S
TIC106N
TIC106D
TIC106S
TIC106N
TO-220 PACKAGE
(TOP VIEW)
SYMBOL
I
P
T(RMS)
V
V
I
I
P
T(AV)
T
I
G(AV)
TSM
T
DRM
RRM
GM
T
GM
stg
C
L
2
3
1
-40 to +110
-40 to +125
TIC106 SERIES
VALUE
400
600
700
800
400
600
700
800
230
3.2
0.2
1.3
0.3
30
5
MDC1ACA
UNIT
°C
°C
°C
W
W
V
V
A
A
A
A
1

Related parts for TIC106M-S

TIC106M-S Summary of contents

Page 1

... APRIL 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. SILICON CONTROLLED RECTIFIERS Pin electrical contact with the mounting base. RATING TIC106D TIC106M TIC106S TIC106N TIC106D TIC106M TIC106S TIC106N = 1 kΩ. GK TIC106 SERIES TO-220 PACKAGE (TOP VIEW MDC1ACA SYMBOL VALUE ...

Page 2

TIC106 SERIES SILICON CONTROLLED RECTIFIERS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER Repetitive peak rated V DRM D off-state current Repetitive peak rated V RRM R reverse current I Gate trigger ...

Page 3

AVERAGE ANODE ON-STATE CURRENT DERATING CURVE 6 Continuous Φ = 180º 0° 180° Φ 1 Conduction Angle Case Temperature - °C C Figure 1. SURGE ON-STATE ...

Page 4

TIC106 SERIES SILICON CONTROLLED RECTIFIERS GATE TRIGGER VOLTAGE vs CASE TEMPERATURE 1 0·8 0·6 0·4 0·2 0 -50 - Case Temperature - °C C Figure 5. 2.5 2.0 1.5 1.0 0.5 0.0 4 TYPICAL CHARACTERISTICS ...

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