TIC116D-S Bourns Inc., TIC116D-S Datasheet - Page 2

• Manufacturer Part Number: TIC116D-S
• Description: SCRs 400V 8A SCR
• Manufacturer: Bourns Inc.

Specifications of TIC116D-S

• Breakover Current Ibo Max: 80 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 20 mA
• Holding Current (ih Max): 40 mA
• Mounting Style: Through Hole
• Package / Case: TO-220
• Maximum Operating Temperature: + 110 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature (unless otherwise noted)
NOTE
thermal characteristics
2
dv/dt
I
I
R
R
V
DRM
RRM
I
V
I
GT
θJC
GT
θJA
H
T
5: This parameter must be measured using pulse techniques, t
PARAMETER
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
Gate trigger voltage
Holding current
On-state
voltage
Critical rate of rise of
off-state voltage
Junction to case thermal resistance
Junction to free air thermal resistance
the current carrying contacts, are located within 3.2 mm from the device body.
V
V
V
V
t
V
t
V
t
V
Initiating I
V
Initiating I
I
V
p(g)
p(g)
p(g)
T
D
R
AA
AA
AA
AA
AA
AA
D
= 8 A
= rated V
= rated V
= rated V
= 12 V
= 12 V
= 12 V
= 12 V
= 12 V
= 12 V
≥ 20 µs
≥ 20 µs
≥ 20 µs
T
T
PARAMETER
= 100 mA
= 100 mA
DRM
RRM
D
I
R
R
R
R
(see Note 5)
I
TEST CONDITIONS
G
G
L
L
L
L
= 0
= 0
= 100 Ω
= 100 Ω
= 100 Ω
= 100 Ω
p
= 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
R O D U C T
T
T
t
T
T
T
T
p(g)
C
C
C
C
C
C
= 110°C
= 110°C
= - 40°C
= 110°C
= - 40°C
= 110°C
≥ 20 µs
Specifications are subject to change without notice.
APRIL 1971 - REVISED SEPTEMBER 2002
I N F O R M A T I O N
MIN
MIN
0.2
TYP
TYP
400
0.8
8
MAX
MAX
62.5
100
2.5
1.5
1.7
20
40
2
2
3
UNIT
UNIT
°C/W
°C/W
V/µs
mA
mA
mA
mA
V
V