51RIA140 1/4" UNF Ruttonsha, 51RIA140 1/4" UNF Datasheet - Page 2

• Manufacturer Part Number: 51RIA140 1/4" UNF
• Description: SCRs 50 Amp 1400 Volt
• Manufacturer: Ruttonsha

Specifications of 51RIA140 1/4" UNF

• Rated Repetitive Off-state Voltage Vdrm: 1400 V
• Off-state Leakage Current @ Vdrm Idrm: 15 mA
• Forward Voltage Drop: 1.6 V
• Mounting Style: Stud
• Package / Case: TO-48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL SPECIFICATIONS
BLOCKING
SWITCHING
TRIGGERING
I
I
I
I
I
I
V
I
I
dv/dt
t
di/dt
t
P
P
I
+V
-V
I
V
V
I
T(RMS)
T(AV)
TSM
2
2
2
H
L
d
q
GM
GT
GD
t
t
TM
G(AV)
GT
GD
GM
GM
t
GM
ON-STATE
Max. RMS on-state current
Max. average on-state current
Max. peak one cycle non-repetitive
surge current
Max. I
Max. I
device fusing
Max. I
device fusing
Max. peak on-state voltage
Max. holding current
Max. latching current
Min. critical rate-of-rise of
off-state voltage
Typical delay time
Max non-repetitive rate of rise of
turned-on current V
Typical turn-off time
Max. peak gate power
Max. average gate power
Max. peak positive gate current
Max. peak positive gate voltage
Max. peak negative gate voltage
Max. required DC gate current
to trigger
Max. required DC gate voltage
to trigger
Max. DC gate voltage not to trigger
Max. DC gate current not to trigger
2
2
2
t capability for fusing
t capability for individual
t capability for indi vi dual
SILICON CONTROLLED RECTIFIERS
RRM
= 700- 1400 V
50 - 600 V
(1)
41RIA
80600
1050
1250
5700
8060
1.65
65
40
41 RIA, 51 RIA SERIES
200
500
100
250
200
400
110
100
0.9
2.5
2.5
3.5
2.5
0.2
5.0
200
10
20
10
50
(1) I
101800
51RIA
10180
1200
1430
7200
1.6
80
50
2
t for time t
Units
A
V/ s
A
A
mA
mA
mA
mA
W
W
2
A
A
V
A
V
V
V
V
A
2
2
s
s
x
s
s
s
s
= I
2
t * t
50 Hz half cycle sine
wave or 6 ms rectangular
pulse.
T
T
For 67% rated V
T
T
T
Conditions
t = 10 ms
t = 10 ms
t = 0.1 to 10 ms
T
Anode supply = 6V, resistive load.
T
to 100% rated V
T
circuit, Gate pulse 10V, 15
T
Gate pulse 20V, 15 , t
T
interval = 50 V min., reapllied dv/dt = 20 V S linear to
rated V
tp
T
T
T
T
V
C
J
J
J
C
C
C
J
J
J
J
J
J
J
DRM
= 25
= 25
= 125
= 25
= 125
= 125
= 94
= 25
= 125
= -40
= -40
= 25
= 125
= 125
x
5ms
= rated voltage
0
0
0
0
0
DRM
0
C, anode supply = 22V, initial I
C
C
C max., 180
C, I
0
0
C, V
0
0
0
0
0
0
C
C
C
C
C
C. Exponential
C, V
C, I
Gate bias : 0V, 100
TM
DM
TM
DM
=
= rated V
= 50A, di/dt = 10
= rated V
DRM
DRM
x I
Max. required gate trigger current is the
lowest value which will trigger all units
with + 6V anode-to-cathode.
Max. required gate trigger voltage is the
lowest value which will trigger all units
with + 6V anode-to-cathode.
Max. gate current or voltage not to trigger is
the maximum value which will not trigger any
unit with rated V
0
C sinusoidal conduction.
T(AV)
Rated V
initial T
V
initial T
V
initial T
p
= 6 S, t
RRM
RRM
DRM
DRM
F o l l o w i n g
conditions and with rated V
applied following surge.
F o l l o w i n g
condition and with no voltage
reapplied following surge.
, I
following surge = 0,
following surge = 0,,
source t
, I
Zero gate bias voltage
TM
J
J
J
RRM
TM
= 125
= 125
= 125
gate open circuited.
= 10A dc resistive
r
DRM
= 2 x rated di/dt.
= 0.1 S max.
applied following surge,
p
S, V
anode-to-cathode.
0
0
0
C
C
C
= 20 S
T
= 2.0A
a n y
a n y
R
during turn-off
r a t e d
r a t e d
l o a d
l o a d
RRM
2