TISP3150F3DR-S Bourns Inc., TISP3150F3DR-S Datasheet

TISP3150F3DR-S

Manufacturer Part Number

TISP3150F3DR-S

Description

Sidacs Medium Volt Dual Bidirectional

Manufacturer

Bourns Inc.

Datasheet

1.TISP3125F3DR.pdf (12 pages)

Specifications of TISP3150F3DR-S

Breakover Current Ibo Max

4.3 A

Rated Repetitive Off-state Voltage Vdrm

120 V

Off-state Leakage Current @ Vdrm Idrm

0.01 mA

Forward Voltage Drop

3 V

Mounting Style

SMD/SMT

Package / Case

SO-8

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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These medium-voltage dual bidirectional thyristor protectors are designed to protect ground backed ringing central office, access and

customer premise equipment against overvoltages caused by lightning and a.c. power disturbances. Offered in three voltage variants to meet

battery and protection requirements, they are guaranteed to suppress and withstand the listed international lightning surges in both polarities.

Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to switch. The

high crowbar holding current prevents d.c. latchup as the current subsides.

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and

are virtually transparent to the system in normal operation.

Ion-Implanted Breakdown Region

Precise and Stable Voltage

Low Voltage Overshoot under Surge

Planar Passivated Junctions

Low Off-State Current <10 µ µ µ µ µ A

Rated for International Surge Wave Shapes

Insert 1xx value corresponding to protection voltages of 125, 150 and 180

Description

How To Order

TISP31xxF3

Device

Waveshape

DEVICE

‘3125F3

‘3150F3

‘3180F3

10/1000 µs

10/160 µs

10/700 µs

10/560 µs

............................................... UL Recognized Component

2/10 µs

8/20 µs

D, S m al l-o u tline

100

120

145

DRM

Package

GR-1089-CORE

IEC 61000-4-5

ITU-T K.20/21

FCC Part 68

Standard

125

150

180

(BO)

T ap e A n d R eeled

Carrier

175

120

TSP

TISP31xxF3 (MV) Overvoltage Protector Series

TISP31xxF3DR-S

Order As

MEDIUM-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR

D Package (Top View)

Device Symbol

Customers should verify actual device performance in their specific applications.

TISP3125F3, TISP3150F3, TISP3180F3

Terminals T, R and G correspond to the

alternative line designators of A, B and C

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

NC - No internal connection

OVERVOLTAGE PROTECTORS

Specifications are subject to change without notice.

MARCH 1994 - REVISED SEPTEMBER 2008

SD3XAA

Related parts for TISP3150F3DR-S

TISP3150F3DR-S Summary of contents

Page 1

Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge V V DRM (BO) DEVICE V V ‘3125F3 100 125 ‘3150F3 120 150 ‘3180F3 145 180 Planar Passivated Junctions Low Off-State Current <10 µ µ µ µ µ ...

Page 2

TISP31xxF3 (MV) Overvoltage Protector Series Absolute Maximum Ratings Repetitive peak off-state voltage, 0 °C < T Non-repetitive peak on-state pulse current (see Notes 1 and 2) 1/2 (Gas tube differential transient, 1/2 voltage wave shape) 2/10 ...

Page 3

TISP31xxF3 (MV) Overvoltage Protector Series Electrical Characteristics for T and and G Terminals Parameter Repetitive peak off ±V DRM D state current V Breakover voltage dv/dt = ±250 V/ms, R ...

Page 4

TISP31xxF3 (MV) Overvoltage Protector Series Parameter Measurement Information V (BR)M V DRM - (BR) DRM V (BR) I (BO) V (BO) Quadrant III Switching Characteristic Figure 1. Voltage-Current Characteristics for any Terminal Pair MARCH 1994 - REVISED SEPTEMBER ...

Page 5

TISP31xxF3 (MV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 0·1 0·01 0·001 - Junction Temperature - °C J Figure ...

Page 6

TISP31xxF3 (MV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals HOLDING CURRENT & BREAKOVER CURRENT vs JUNCTION TEMPERATURE 1.0 0.9 0.8 0.7 0.6 0.5 I (BO) 0.4 0 0.2 0.1 -25 0 ...

Page 7

TISP31xxF3 (MV) Overvoltage Protector Series Typical Characteristics - R and and G Terminals SURGE CURRENT vs DECAY TIME 1000 100 100 Decay µs Figure 10. Customers should verify actual device performance ...

Page 8

TISP31xxF3 (LV) Overvoltage Protector Series Typical Characteristics - R and T Terminals OFF-STATE CURRENT vs JUNCTION TEMPERATURE 100 V = ± 0·1 0·01 0·001 - Junction Temperature - °C J Figure ...

Page 9

TISP31xxF3 (LV) Overvoltage Protector Series Thermal Information MAXIMUM NON-RECURRING 50 Hz CURRENT vs CURRENT DURATION 0· Current Duration - s Figure 14. TI3MAB V = 250 Vrms GEN 100 = 10 to 150 ...

Page 10

TISP31xxF3 (MV) Overvoltage Protector Series Electrical Characteristics ® The electrical characteristics of a TISP on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which generally minimize the temperature ...

Page 11

TISP31xxF3 (MV) Overvoltage Protector Series Protection Voltage The protection voltage, (V (BO) ), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the ® rate of current rise, di/dt, when the TISP be estimated by ...

Page 12

TISP31xxF3 (MV) Overvoltage Protector Series Longitudinal Balance ® Figure 17 shows a three terminal TISP terminal pair capacitance measured with a three terminal or guarded capacitance bridge. If wire R is biased at a larger potential than wire T, then ...

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