IRKT26/10P Vishay, IRKT26/10P Datasheet - Page 2

• Manufacturer Part Number: IRKT26/10P
• Description: SCR Modules 1000 Volt 27 Amp
• Manufacturer: Vishay

Specifications of IRKT26/10P

• Mounting Style: Screw
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94418
IRK.26 Series
Bulletin I27214 03/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
On-state Conduction
I
I
I
I
or
I
I
I
V
r
V
V
di/dt
I
I
(1) I
(4) I >
T(AV)
F(AV)
O(RMS
TSM
FSM
2
2
t
H
L
t
T(TO)
TM
FM
t
IRK.26
Type number
2
t for time t
)
Parameters
voltage (2)
Max. average on-state
current (Thyristors)
Max. average forward
current (Diodes)
Max. continuous RMS
on-state current.
As AC switch
Max. peak, one cycle
non-repetitive on-state
or forward current
Max. I
Max. I
Max. value of threshold
Max. value of on-state
slope resistance (2)
Max. peak on-state or
forward voltage
Max. non-repetitive rate
of rise of turned on
current
Max. holding current
Max. latching current
x I
AV
2
2
t for fusing
x
t for fusing (1)
=
I
2
t x t
x
Voltage
Code
04
06
08
10
12
14
16
-
(2) Average power
peak reverse voltage peak reverse voltage
V
RRM
repetitive
IRK.26
, maximum
12.11
11.82
1000
1200
1400
1600
1100
1000
8000
1.95
0.92
0.95
400
420
335
350
470
490
800
730
560
510
150
200
400
400
600
800
60
27
27
V
=
V
T(TO)
x I
T(AV)
V
+
A/µs
RSM
non-repetitive
Units
A
r
A
m
mA
t
2
V
A
2
V
x (I
s
s
, maximum
1100
1300
1500
1700
500
700
900
T(RMS)
V
180
T
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t= 0.1 to 10ms, no voltage reappl. T
Low level (3)
High level (4)
Low level (3)
High level (4)
I
I
T
I
t
T
resistive load, gate open circuit
T
Conditions
TM
FM
TM
r
)
C
J
J
J
< 0.5 µs, t
2
= 25
= 25
= 25
= 85
= x I
= x I
= x I
o
conduction, half sine wave,
o
o
o
o
C, anode supply = 6V, resistive load
C, anode supply = 6V,
C
C, from 0.67 V
T(AV)
F(AV)
T(AV)
(3) 16.7% x
peak off-state voltage,
V
No voltage
No voltage
reapplied
100% V
reapplied
T
no voltage reapplied
reapplied
100% V
reapplied
T
no voltage reapplied
p
DRM
J
J
> 6 µs
gate open circuit
= 25
= 25
,
I
(RMS)
I
g
, max. repetitive
o
o
= 500mA,
RRM
C,
RRM
C,
1000
1200
1400
1600
400
600
800
or
V
DRM
x I
Initial T
T
T
T
AV
,
J
J
Initial T
J
= 25
= T
= T
< I <
www.vishay.com
half wave,
Sinusoidal
J
J
J
o
J
=T
max
C
max
= T
J
= T
J
x I
max
J
max.
AV
J
125°C
I
I
max.
mA
RRM
DRM
I
15
(RMS)
2