DAN222T1G ON Semiconductor, DAN222T1G Datasheet - Page 2

• Manufacturer Part Number: DAN222T1G
• Description: DIODE SWITCH DUAL CC 80V SC75-3
• Manufacturer: ON Semiconductor

Specifications of DAN222T1G

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100mA
• Current - Reverse Leakage @ Vr: 100nA @ 70V
• Current - Average Rectified (io) (per Diode): 100mA (DC)
• Voltage - Dc Reverse (vr) (max): 80V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416, EMT3, 3-SSMini
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DAN222T1G; DAN222T1GOSTR

2. t
ELECTRICAL CHARACTERISTICS
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
100
rr
1.0
0.1
10
Test Circuit on following page.
0.2
Characteristic
0.4
Figure 1. Forward Voltage
V
F
T
, FORWARD VOLTAGE (VOLTS)
A
= 85C
0.6
1.0
0.9
0.6
0.7
0.8
0
TYPICAL ELECTRICAL CHARACTERISTICS
T
0.8
A
(T
= 25C
t
rr
A
Symbol
(Note 2)
= 25C)
T
V
C
V
I
A
R
R
D
F
= -- 40C
Figure 3. Diode Capacitance
1.0
2
V
R
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
I
F
= 5.0 mA, V
1.2
2
4
V
R
0.001
R
0.01
1.0
0.1
= 6.0 V, f = 1.0 MHz
10
= 6.0 V, R
I
I
F
0
Condition
R
V
= 100 mA
R
= 100 mA
= 70 V
6
L
= 100 Ω, I
10
Figure 2. Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
rr
8
T
T
= 0.1 I
T
T
A
A
T
A
A
20
A
= 150C
= 125C
= 55C
= 25C
= 85C
R
Min
80
30
--
--
--
--
Max
0.1
1.2
3.5
4.0
--
40
mAdc
Unit
Vdc
Vdc
pF
ns
50