DAN222T1G ON Semiconductor, DAN222T1G Datasheet - Page 2
DAN222T1G
Manufacturer Part Number
DAN222T1G
Description
DIODE SWITCH DUAL CC 80V SC75-3
Manufacturer
ON Semiconductor
Datasheet
1.DAN222T1G.pdf
(4 pages)
Specifications of DAN222T1G
Voltage - Forward (vf) (max) @ If
1.2V @ 100mA
Current - Reverse Leakage @ Vr
100nA @ 70V
Current - Average Rectified (io) (per Diode)
100mA (DC)
Voltage - Dc Reverse (vr) (max)
80V
Reverse Recovery Time (trr)
4ns
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Diode Configuration
1 Pair Common Cathode
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DAN222T1G
DAN222T1GOSTR
DAN222T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DAN222T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
DAN222T1G
Manufacturer:
ON/安森美
Quantity:
20 000
2. t
ELECTRICAL CHARACTERISTICS
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
100
rr
1.0
0.1
10
Test Circuit on following page.
0.2
Characteristic
0.4
Figure 1. Forward Voltage
V
F
T
, FORWARD VOLTAGE (VOLTS)
A
= 85C
0.6
1.0
0.9
0.6
0.7
0.8
0
TYPICAL ELECTRICAL CHARACTERISTICS
T
0.8
A
(T
= 25C
t
rr
A
Symbol
(Note 2)
= 25C)
T
V
C
V
I
A
R
R
D
F
= -- 40C
Figure 3. Diode Capacitance
1.0
2
V
R
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
I
F
= 5.0 mA, V
1.2
2
4
V
R
0.001
R
0.01
1.0
0.1
= 6.0 V, f = 1.0 MHz
10
= 6.0 V, R
I
I
F
0
Condition
R
V
= 100 mA
R
= 100 mA
= 70 V
6
L
= 100 Ω, I
10
Figure 2. Reverse Current
V
R
, REVERSE VOLTAGE (VOLTS)
rr
8
T
T
= 0.1 I
T
T
A
A
T
A
A
20
A
= 150C
= 125C
= 55C
= 25C
= 85C
R
Min
80
30
--
--
--
--
Max
0.1
1.2
3.5
4.0
--
40
mAdc
Unit
Vdc
Vdc
pF
ns
50