BAV70WT1G ON Semiconductor, BAV70WT1G Datasheet - Page 2

• Manufacturer Part Number: BAV70WT1G
• Description: DIODE SWITCH DUAL CC 70V SOT323
• Manufacturer: ON Semiconductor

Specifications of BAV70WT1G

• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 5µA @ 70V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 70V
• Reverse Recovery Time (trr): 6ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Product: Switching Diodes
• Peak Reverse Voltage: 70 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.5 A
• Configuration: Dual Common Cathode
• Recovery Time: 6 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 5 uA
• Operating Temperature Range: - 55 C to + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BAV70WT1GOSTR

3. For each individual diode while the second diode is unbiased.
ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage
Reverse Voltage Leakage Current (Note 3)
Forward Voltage
Diode Capacitance
Reverse Recovery Time
Forward Recovery Voltage
(I
(V
(V
(I
(I
(I
(I
(V
(I
(I
(BR)
F
F
F
F
F
F
R
R
R
= 1.0 mA)
= 10 mA)
= 50 mA)
= 150 mA)
= I
= 10 mA, t
= 70 V)
= 50 V)
= 0 V, f = 1.0 MHz)
= 100 mA)
R
= 10 mA, R
r
= 20 ns) (Figure 2)
L
= 100 Ω, I
Characteristic
R(REC)
= 1.0 mA) (Figure 1)
(T
A
= 25C unless otherwise noted)
http://onsemi.com
2
Symbol
V
V
C
V
(BR)
I
t
RF
R
rr
F
D
Min
70
--
--
--
--
--
--
--
--
--
1000
1250
Max
1.75
100
715
855
5.0
1.5
6.0
--
Unit
mV
mA
nA
pF
ns
V
V