TISP61089D Bourns Inc., TISP61089D Datasheet - Page 5
![SCRs Dual P Gate Forward Conducting](/photos/16/7/160738/soic-8_sml.jpg)
TISP61089D
Manufacturer Part Number
TISP61089D
Description
SCRs Dual P Gate Forward Conducting
Manufacturer
Bourns Inc.
Datasheet
1.TISP61089ADR-S.pdf
(8 pages)
Specifications of TISP61089D
Breakover Current Ibo Max
11 A
Rated Repetitive Off-state Voltage Vdrm
100 V
Off-state Leakage Current @ Vdrm Idrm
0.005 mA
Holding Current (ih Max)
150 mA
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TISP61089D
Manufacturer:
BOURNS/伯恩斯
Quantity:
20 000
Company:
Part Number:
TISP61089DR
Manufacturer:
TI
Quantity:
321
Part Number:
TISP61089DR
Manufacturer:
BOURNS/伯恩斯
Quantity:
20 000
Part Number:
TISP61089DR-S
Manufacturer:
BOURNS/伯恩斯
Quantity:
20 000
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
NOVEMBER 1995 - REVISED JULY 2008
Thermal Information
TISP61089 Gated Protector Series
(Gate Voltage Ranges are -20 V to -75 V for the '61089 and -20 V to -100 V for the '61089A)
Figure 2. Non-repetitive Peak On-State Current against Duration
1.5
0.8
0.7
0.6
0.5
20
15
10
8
7
6
5
4
3
2
1
0.01
PEAK NON-RECURRING AC
0.1
CURRENT DURATION
t — Current Duration — s
1
V
RING AND T IP TERM INALS:
Equal I
simultaneously
GROUND TERM INAL:
Current twice I
GG
vs
= -100 V
TSM
10
values applied
EIA /JESD51
Environment and
PCB, T
V
GG
= -80 V
TSM
100
A
V
value
GG
= 25 °C
= -60 V
TI61AFA
1000