TISP4350T3BJR Bourns Inc., TISP4350T3BJR Datasheet - Page 7

• Manufacturer Part Number: TISP4350T3BJR
• Description: Sidacs
• Manufacturer: Bourns Inc.

Specifications of TISP4350T3BJR

• Breakover Current Ibo Max: 30 A
• Rated Repetitive Off-state Voltage Vdrm: 275 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Mounting Style: SMD/SMT
• Package / Case: DO-214AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
1.00
0.99
0.98
0.97
0.96
0.95
0.94
0.93
1.5
TISP4xxxH4BJ Overvoltage Protector Series
30
20
15
10
9
8
7
6
5
4
3
2
-40
0·1
'4165 THRU '4200
-35
NON-REPETITIVE PEAK ON-STATE CURRENT
'4265 THRU '4350
T
AMIN
-30
MINIMUM AMBIENT TEMPERATURE
- Minimum Ambient Temperature - °C
-25
1
V DRM DERATING FACTOR
-20
t - Current Duration - s
CURRENT DURATION
Figure 10.
Figure 8.
-15
V
R
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
T
A
GEN
GEN
= 25 °C
-10
= 600 Vrms, 50/60 Hz
= 1.4*V
vs
10
vs
-5
GEN
0
/I
TSM(t)
5
100
10
15
TI4HAFA
TI4HAC
20
1000
25
700
600
500
400
300
250
200
150
120
100
150
100
90
Customers should verify actual device performance in their specific applications.
1.5
70
50
40
30
20
15
10
-40 -30 -20 -10 0
7
5
4
3
2
1
0·1
T
A
BELLCORE 2/10
- Ambient Temperature - °C
AMBIENT TEMPERATURE
1
THERMAL IMPEDANCE
t - Power Duration - s
POWER DURATION
IMPULSE RATING
Figure 9.
Figure 11.
Specifications are subject to change without notice.
I
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
T
10 20 30 40 50 60 70 80
TSM(t)
A
= 25 °C
NOVEMBER 1997 - REVISED JANUARY 2007
APPLIED FOR TIME t
vs
vs
10
BELLCORE 10/1000
IEC 1.2/50, 8/20
ITU-T 10/700
FCC 10/560
FCC 10/160
100
TC4HAA
TI4HAE
1000