TISP61511D Bourns Inc., TISP61511D Datasheet - Page 4
![Sidacs Dual P Gate Forward Conducting](/photos/16/7/160738/soic-8_sml.jpg)
TISP61511D
Manufacturer Part Number
TISP61511D
Description
Sidacs Dual P Gate Forward Conducting
Manufacturer
Bourns Inc.
Datasheet
1.TISP61089ADR-S.pdf
(8 pages)
Specifications of TISP61511D
Breakover Current Ibo Max
5 A
Rated Repetitive Off-state Voltage Vdrm
100 V
Off-state Leakage Current @ Vdrm Idrm
0.005 mA
Forward Voltage Drop
4 V
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TISP61511DR
Manufacturer:
BOURNS
Quantity:
13 050
Part Number:
TISP61511DR
Manufacturer:
BOURNS/伯恩斯
Quantity:
20 000
Company:
Part Number:
TISP61511DR-S
Manufacturer:
Bourns
Quantity:
231
Parameter Measurement Information
Characteristic
Switching
TISP61089 Gated Protector Series
-v
Quadrant III
V
V
(BO)
GK(BO)
V
GG
Unless Otherwise Noted, All Voltages are Referenced to the Anode
Figure 1. Voltage-Current Characteristic
I
FSM
(= |I
I
TSM
PPSM
|)
I
F
+i
-i
I
I
I
I
I
D
PPSM
T
TSM
H
V
F
Customers should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
Characteristic
Conduction
Forward
NOVEMBER 1995 - REVISED JULY 2008
Quadrant I
PM6XAAC
+v