L601E3_ Littelfuse Inc, L601E3_ Datasheet - Page 4
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L601E3_
Manufacturer Part Number
L601E3_
Description
Triacs - Use 576-L601E3
Manufacturer
Littelfuse Inc
Datasheet
1.L401E5.pdf
(8 pages)
Specifications of L601E3_
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
20 A
Off-state Leakage Current @ Vdrm Idrm
0.01 mA
Gate Trigger Voltage (vgt)
2 V
Gate Trigger Current (igt)
4.16666666666667E-02
Holding Current (ih Max)
5 mA
Forward Voltage Drop
1.6 V
Mounting Style
Through Hole
Package / Case
TO-92
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 65 C
Repetitive Peak Forward Blocking Voltage
600 V (Min)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Sensitive Triacs
Specified Test Conditions
di/dt — Maximum rate-of-change of on-state current; I
dv/dt — Critical rate-of-rise of off-state voltage at rated V
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V
I
I
I
I
I
I
I
P
P
t
V
V
V
http://www.littelfuse.com
+1 972-580-7777
2
DRM
GT
GTM
H
T(RMS)
TSM
gt
G(AV)
GM
DRM
GT
TM
t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
— Holding current gate open; initial on-state current = 100 mA dc
— Gate controlled turn-on time; I
— DC gate trigger current in specific operating quadrants;
0.1
and I
unenergized
for fusing
V
I
— DC gate trigger voltage; V
— Peak on-state voltage at max rated RMS current
T(RMS)
— Peak gate power dissipation;
— Peak gate trigger current
— Peak one-cycle surge
— Peak off-state current, gate open; V
D
MAX
(11)
6 A
8 A
— Repetitive peak off-state/blocking voltage
— Average gate power dissipation
= 12 V dc; R
— RMS on-state current conduction angle of 360°
µ
s rise time
T(RMS)
commutating di/dt = 0.54 rated I
L
= 60 Ω
MT1
L2006L5
L4006L5
L6006L5
L2006L6
L4006L6
L6006L6
L2006L8
L4006L8
L6006L8
L2008L6
L4008L6
L6008L6
L2008L8
L4008L8
L6008L8
Isolated
TO-220
MT2
See “Package Dimensions” section for variations. (12)
G
D
= 12 V dc; R
GT
I
GT
= 50 mA with 0.1 µs rise time
≤ I
GTM
DRM
MT2
T(RMS)
Part No.
L
L2006D5
L4006D5
L6006D5
L2006D6
L4006D6
L6006D6
L2006D8
L4006D8
L6006D8
L2008D6
L4008D6
L6008D6
L2008D8
L4008D8
L6008D8
= max rated value
TO-252
= 60 Ω
D-Pak
MT1
/ms; gate
GT
MT2
G
DRM
= 50 mA with
Non-isolated
gate open
DRM
E1 - 4
MT1
L2006V5
L4006V5
L6006V5
L2006V6
L4006V6
L6006V6
L2006V8
L4006V8
L6006V8
L2008V6
L4008V6
L6008V6
L2008V8
L4008V8
L6008V8
TO-251
V-Pak
MT2
General Notes
•
•
•
•
•
MT2
G
All measurements are made with 60 Hz resistive load and at an
ambient temperature of +25 °C unless otherwise specified.
Operating temperature range (T
devices and -40 °C to +110 °C for all other devices.
Storage temperature range (T
devices, -40 °C to +150 °C for TO-202 devices, and -40 °C to
+125 °C for TO-220 devices.
Lead solder temperature is a maximum of 230 °C for 10 seconds
maximum at a minimum of 1/16” (1.59 mm) from case.
The case or lead temperature (T
dimensional outline drawings. See “Package Dimensions” section
of this catalog.
V
Volts
MIN
200
400
600
200
400
600
200
400
600
200
400
600
200
400
600
DRM
(1)
QI
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
QII
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
mAmps
(3) (6)
MAX
I
GT
S
) is -65 °C to +150 °C for TO-92
J
QIII
C
10
10
10
10
10
10
) is -65 °C to +110 °C for TO-92
5
5
5
5
5
5
5
5
5
or T
L
QIV
10
10
10
20
20
20
10
10
10
20
20
20
) is measured as shown on
5
5
5
Thyristor Product Catalog
T
C
©2004 Littelfuse, Inc.
= 25 °C T
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
0.02
(1) (14)
mAmps
I
MAX
DRM
Data Sheets
C
= 110 °C
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5