BT134-800E NXP Semiconductors, BT134-800E Datasheet - Page 4
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BT134-800E
Manufacturer Part Number
BT134-800E
Description
Triacs RAIL TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BT134-800E127.pdf
(6 pages)
Specifications of BT134-800E
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
27 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
25 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.7 V @ 5 A
Mounting Style
SMD/SMT
Package / Case
SOT-82
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT134-800E,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BT134-800E
Manufacturer:
NXP
Quantity:
20 000
Part Number:
BT134-800E
Manufacturer:
HSDQ/黄山电器
Quantity:
20 000
Philips Semiconductors
August 1997
Triacs
sensitive gate
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
(T
3
2
1
0
IGT(25 C)
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BT136E
TRIAC
TRIAC
Tj / C
Tj / C
Tj / C
50
50
50
100
T2+ G-
T2- G-
100
100
T2+ G+
T2- G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
1000
100
12
10
0.01
10
8
6
4
2
0
0.1
1
10
0
10us
IT / A
1
0
dVD/dt (V/us)
Rs = 0.091 ohms
dV
Tj = 125 C
Zth j-mb (K/W)
Vo = 1.27 V
Tj = 25 C
D
/dt versus junction temperature T
0.5
0.1ms
pulse width t
1ms
1
50
BT136
VT / V
tp / s
BT136
10ms
Tj / C
1.5
typ
P
D
BT134 series E
p
0.1s
.
100
Product specification
2
t
p
unidirectional
bidirectional
max
1s
2.5
th j-mb
t
Rev 1.200
, versus
j
.
10s
150
3