BTA216-600B NXP Semiconductors, BTA216-600B Datasheet
BTA216-600B
Specifications of BTA216-600B
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BTA216-600B Summary of contents
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... ˚C prior to j surge 16 0 / over any period - Product specification BTA216 series B MAX. MAX. MAX. UNIT 500B 600B 800B 500 600 800 140 140 140 SYMBOL T2 G MAX. UNIT -500 -600 -800 1 1 500 600 800 16 140 ...
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... 125 ˚ 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit V = 400 125 ˚ T(RMS) without snubber; gate open circuit 0 DRM(max / Product specification BTA216 series B MIN. TYP. MAX. UNIT - - 1.2 K 1.7 K K/W MIN. TYP. MAX. UNIT ...
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... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 T time 1.2 1 0.8 0.6 0.4 100 1000 - Product specification BTA216 series B BT139 100 Tmb / C BT139 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 99˚C. mb VGT(Tj) BT136 0 50 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...
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... Fig.11. Transient thermal impedance dIcom/dt (A/ms) 1000 100 100 150 ( (25˚C), Fig.12. Typical, critical rate of change of commutating current Product specification BTA216 series B BT139 typ max 0.5 1 1 BT139 unidirectional bidirectional 0.1ms 1ms 10ms 0.1s 1s 10s versus th j-mb pulse width t ...
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... Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1997 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. TO220AB; pin 2 connected to mounting base. 5 Product specification BTA216 series B 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.200 ...
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... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 BTA216 series B 6 Product specification Rev 1.200 ...