BT139B-600E /T3 NXP Semiconductors, BT139B-600E /T3 Datasheet - Page 3

• Manufacturer Part Number: BT139B-600E /T3
• Description: Triacs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT139B-600E /T3

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 170 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 45 mA
• Forward Voltage Drop: 1.6 V @ 20 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT139B-600E,118

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT139B-600E
Product data sheet
Symbol
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
GM
G(AV)
T
/dt
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
All information provided in this document is subject to legal disclaimers.
Conditions
full sine wave; T
see
full sine wave; T
see
full sine wave; T
t
I
T2+ G+
I
T2+ G-
I
T2- G-
I
T2- G+
over any 20 ms period
p
T
T
T
T
Rev. 4 — 22 March 2011
= 10 ms; sine-wave pulse
= 20 A; I
= 20 A; I
= 20 A; I
= 20 A; I
Figure
Figure
G
G
G
G
2; see
4; see
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
mb
j(init)
j(init)
Figure 3
Figure 5
≤ 99 °C; see
= 25 °C; t
= 25 °C; t
G
G
G
G
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
p
p
= 20 ms;
= 16.7 ms
Figure
1;
BT139B-600E
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2011. All rights reserved.
Max
600
16
155
170
120
50
50
50
10
2
5
5
0.5
150
125
4Q Triac
Unit
V
A
A
A
A
A/µs
A/µs
A/µs
A/µs
A
V
W
W
°C
°C
2
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