BT136S-800E /T3 NXP Semiconductors, BT136S-800E /T3 Datasheet - Page 8

• Manufacturer Part Number: BT136S-800E /T3
• Description: Triacs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT136S-800E /T3

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 27 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.7 V @ 5 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT136S-800E,118

NXP Semiconductors
BT136S-800E
Product data sheet
Fig 11. Normalized gate trigger voltage as a function of junction temperature
V
GT
V
(25 C)
GT
1.6
1.2
0.8
0.4
0
60
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 30 March 2011
10
40
90
003aae832
T
j
( C)
140
BT136S-800E
© NXP B.V. 2011. All rights reserved.
4Q Triac
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