BT137-800E NXP Semiconductors, BT137-800E Datasheet
BT137-800E
Specifications of BT137-800E
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BT137-800E Summary of contents
Page 1
... CONDITIONS full sine wave; T 102 ˚C mb full sine wave ˚C prior to j surge 16 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT137 series E MAX. MAX. UNIT BT137- 600E 800E 600 800 SYMBOL MIN. MAX. UNIT -600 -800 1 - ...
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... GT T2+ G+ T2+ G- T2 400 0 125 ˚ 125 ˚C D DRM(max) j CONDITIONS 125 ˚C; DM DRM(max) j exponential waveform; gate open circuit 0 DRM(max / Product specification BT137 series E MIN. TYP. MAX. UNIT - - 2.0 K 2.4 K K/W MIN. TYP. MAX. UNIT - 2.5 ...
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... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 T time 1.2 1 0.8 0.6 0.4 1000 - Product specification BT137 series E BT137 102 100 Tmb / C 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 102˚C. mb VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...
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... I (25˚C), Fig.11. Transient thermal impedance dVD/dt (V/us) 1000 100 10 1 100 150 (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT137 series E max typ 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-mb pulse width 100 /dt versus junction temperature T ...
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... Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 2001 10,3 max 3,7 2,8 3,0 13,5 min 1 0,9 max (3x) 2,54 2,54 Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. 5 Product specification BT137 series E 4,5 max 1,3 5,9 min 15,8 max 0,6 2,4 Rev 1.400 ...
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... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 6 Product specification BT137 series E Rev 1.400 ...