BT139-600E NXP Semiconductors, BT139-600E Datasheet - Page 3
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BT139-600E
Manufacturer Part Number
BT139-600E
Description
Triacs RAIL TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BT139-800E127.pdf
(12 pages)
Specifications of BT139-600E
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
170 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
25 mA
Holding Current (ih Max)
45 mA
Forward Voltage Drop
1.6 V @ 20 A
Mounting Style
SMD/SMT
Package / Case
SOT-78
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT139-600E,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BT139-600E
Manufacturer:
TE
Quantity:
3 000
Company:
Part Number:
BT139-600E
Manufacturer:
PH
Quantity:
50 000
Company:
Part Number:
BT139-600E
Manufacturer:
PHI
Quantity:
1 000
Part Number:
BT139-600E
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
9397 750 13437
Product data sheet
Fig 1. Total power dissipation as a function of RMS on-state current; maximum values.
Fig 2. Non-repetitive peak on-state current as a function of the number (n) of sinusoidal current cycles;
I
P
(W)
TSM
(A)
tot
160
120
25
20
15
10
80
40
5
0
0
f = 50 Hz.
maximum values.
0
1
= conduction angle.
5
10
Rev. 03 — 23 September 2004
10
10
2
15
BT139 series E
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
120
90
180
60
30
=
n
I
T
T(RMS)
I
j(initial)
T
Triacs; sensitive gate
(A)
= 25 C max
T
001aab093
001aab102
I
TSM
t
10
20
3
95
T
101
107
113
119
125
mb(max)
( C)
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