BT139-800E NXP Semiconductors, BT139-800E Datasheet - Page 5

• Manufacturer Part Number: BT139-800E
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT139-800E

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 170 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 45 mA
• Forward Voltage Drop: 1.6 V @ 20 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT139-800E,127

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 13437
Product data sheet
Symbol
R
R
Fig 6. Transient thermal impedance as a function of pulse width.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
(1) Unidirectional.
(2) Bidirectional.
10
10
10
10
1
1
2
3
10
5
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
10
4
10
3
Rev. 03 — 23 September 2004
Conditions
full cycle;
half cycle;
in free air
10
Figure 6
Figure 6
2
10
1
(1)
(2)
Min
-
-
-
BT139 series E
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
P
Typ
-
-
60
D
1
Triacs; sensitive gate
t
p
t
p
Max
1.2
1.7
-
(s)
001aab098
t
10
Unit
K/W
K/W
K/W
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