BT151X-650R NXP Semiconductors, BT151X-650R Datasheet - Page 7
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BT151X-650R
Manufacturer Part Number
BT151X-650R
Description
SCRs RAIL SCR
Manufacturer
NXP Semiconductors
Datasheet
1.BT151X-650R127.pdf
(11 pages)
Specifications of BT151X-650R
Breakover Current Ibo Max
110 A
Rated Repetitive Off-state Voltage Vdrm
650 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.75 V
Gate Trigger Voltage (vgt)
1.5 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
15 mA
Holding Current (ih Max)
20 mA
Mounting Style
SMD/SMT
Package / Case
SOT-186A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT151X-650R,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BT151X-650R
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
8. Package information
9397 750 13162
Product data sheet
Fig 9. On-state current characteristics.
Fig 11. Normalized holding current as a function of
I
H
I
H
(25 C)
(1) T
(2) T
(3) T
(A)
(T
I
T
j
30
20
10
)
0
3
2
1
0
V
R
junction temperature.
0
50
j
j
j
O
S
= 125 C; typical values.
= 125 C; maximum values.
= 25 C; maximum values.
= 0.0304 .
= 1.06 V.
0.5
0
Epoxy meets requirements of UL94 V-0 at
50
1
(1)
(2)
100
1.5
(3)
001aaa959
001aaa950
T
V
j
T
( C)
(V)
150
2
Rev. 04 — 9 June 2004
Fig 10. Normalized latching current as a function of
Fig 12. Critical rate of rise of off-state voltage as a
I
L
I
dV
(25 C)
(V/ s)
L
(1) R
(2) Gate open circuit.
(T
D
10
10
10
/dt
j
10
)
3
2
1
0
4
3
2
junction temperature.
function of junction temperature; minimum
values.
1
50
0
GK
8
inch.
= 100 .
(2)
(1)
0
50
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT151X series
50
100
100
T
j
001aaa951
T
001aaa949
( C)
j
( C)
150
150
Thyristors
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