BTA416Y-600B NXP Semiconductors, BTA416Y-600B Datasheet - Page 4
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BTA416Y-600B
Manufacturer Part Number
BTA416Y-600B
Description
Triacs RAIL-THYR AND TRIACS
Manufacturer
NXP Semiconductors
Datasheet
1.BTA416Y-600B.pdf
(14 pages)
Specifications of BTA416Y-600B
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
176 A
Off-state Leakage Current @ Vdrm Idrm
2 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
50 mA
Holding Current (ih Max)
60 mA
Forward Voltage Drop
1.5 V @ 20 A
Mounting Style
Through Hole
Package / Case
TO-220
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA416Y-600B,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA416Y-600B
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BTA416Y-600B127
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BTA416Y-600B
Product data sheet
Fig 3.
Fig 4.
I
(A)
TSM
(W)
P
tot
180
150
120
20
16
12
90
60
30
8
4
0
0
values
Total power dissipation as a function of RMS on-state current; maximum values
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
0
1
conduction
(degrees)
angle
120
180
30
60
90
2
factor
form
1.57
2.8
2.2
1.9
a
4
4
All information provided in this document is subject to legal disclaimers.
10
6
Rev. 3 — 27 June 2011
8
10
10
12
2
BTA416Y-600B
14
n (number of cycles)
I
T
T
j(init)
16
1/f
= 25 C max
120
90
60
30
= 180
© NXP B.V. 2011. All rights reserved.
I
T(RMS)
3Q Hi-Com Triac
003aab816
003aab817
I
TSM
(A)
t
10
18
3
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