BT134-800 NXP Semiconductors, BT134-800 Datasheet - Page 3

• Manufacturer Part Number: BT134-800
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT134-800

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 27 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 70 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.7 V @ 5 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-82
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT134-800,127

Philips Semiconductors
August 1997
Triacs
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
8
7
6
5
4
3
2
1
0
on-state current I
1000
30
25
20
15
10
0
Ptot / W
100
5
0
10
1
ITSM / A
10us
ITSM / A
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
1
T2- G+ quadrant
100us
dI /dt limit
1
T(RMS)
T
TSM
Number of cycles at 50Hz
10
TSM
2
, versus number of cycles, for
IT(RMS) / A
, where
, versus pulse width t
BT136
BT136
BT136
1ms
T / s
3
I
I
T
T
Tj initial = 25 C max
Tj initial = 25 C max
p
100
= conduction angle.
T
10ms
T
20ms.
Tmb(max) / C
4
120
90
60
30
tot
I TSM
I TSM
= 180
, versus rms
time
time
100ms
p
, for
1000
5
101
104
107
110
113
116
119
122
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
Fig.4. Maximum permissible rms current I
5
4
3
2
1
0
-50
GT
1.6
1.4
1.2
0.8
0.6
0.4
IT(RMS) / A
12
10
8
6
4
2
0
0.01
(T
1
-50
IT(RMS) / A
VGT(25 C)
versus mounting base temperature T
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
BT136
Tmb / C
BT136
BT136
Tj / C
50
50
mb
Product specification
1
BT134 series
107˚C.
100
100
107 C
mb
Rev 1.200
T(RMS)
.
150
10
150
,
j
.