NSR30CM3T5G ON Semiconductor, NSR30CM3T5G Datasheet - Page 2

• Manufacturer Part Number: NSR30CM3T5G
• Description: DIODE SCHOTTKY DUAL 30V SOT-723
• Manufacturer: ON Semiconductor

Specifications of NSR30CM3T5G

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Current - Average Rectified (io) (per Diode): 200mA (DC)
• Voltage - Dc Reverse (vr) (max): 30V
• Reverse Recovery Time (trr): 5ns
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 0.2 A
• Max Surge Current: 0.6 A
• Configuration: Dual Common Cathode
• Recovery Time: 5 ns
• Forward Voltage Drop: 0.8 V @ 0.1 A
• Maximum Reverse Leakage Current: 2 uA
• Operating Temperature Range: + 125 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NSR30CM3T5G; NSR30CM3T5GOSTR

ELECTRICAL CHARACTERISTICS
Reverse Breakdown Voltage (I
Total Capacitance (V
Reverse Leakage (V
Forward Voltage (I
Forward Voltage (I
Forward Voltage (I
Reverse Recovery Time
(I
Forward Voltage (I
Forward Voltage (I
Forward Current (DC)
Repetitive Peak Forward Current
Non−Repetitive Peak Forward Current (t < 1.0 s)
F
= I
R
= 10 mA, I
R(REC)
F
F
F
F
F
= 0.1 mA)
= 30 mA)
= 100 mA)
= 1.0 mA)
= 10 mA)
R
R
= 25 V)
= 1.0 V, f = 1.0 MHz)
= 1.0 mA, Figure 1)
Characteristic
R
= 10 mA)
(T
A
= 25°C unless otherwise noted) (EACH DIODE)
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2
Symbol
V
I
I
(BR)R
FRM
FSM
C
V
V
V
V
V
I
t
I
R
rr
F
T
F
F
F
F
F
Min
30
−
−
−
−
−
−
−
−
−
−
−
0.22
0.41
0.52
0.29
0.35
Typ
7.6
0.5
−
−
−
−
−
Max
0.24
0.32
0.40
200
300
600
2.0
0.5
0.8
5.0
10
−
Unit
mA
mA
mA
pF
mA
ns
V
V
V
V
V
V