BT136X-600F NXP Semiconductors, BT136X-600F Datasheet

Triacs RAIL TRIAC

BT136X-600F

Manufacturer Part Number
BT136X-600F
Description
Triacs RAIL TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BT136X-600127.pdf (7 pages)

Specifications of BT136X-600F

Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
27 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
70 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.7 V @ 5 A
Mounting Style
SMD/SMT
Package / Case
SOT-186A
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT136X-600F,127
Philips Semiconductors
GENERAL DESCRIPTION
Passivated triacs in a full pack plastic
envelope,
applications
bidirectional transient and blocking
voltage capability and high thermal
cycling
applications include motor control,
industrial
heating and static switching.
PINNING - SOT186A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/ s.
June 2001
Triacs
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
case isolated
PIN
t
stg
j
DRM
GM
GM
G(AV)
T
1
2
3
/dt
main terminal 1
main terminal 2
gate
and
performance.
intended
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
2
t for fusing
DESCRIPTION
domestic
requiring
for
use
lighting,
Typical
high
in
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave; T
full sine wave; T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
G
T(RMS)
TSM
DRM
/dt = 0.2 A/ s
= 6 A; I
G
= 0.2 A;
case
PARAMETER
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak on-state
current
1
1 2 3
hs
j
= 25 ˚C prior to
92 ˚C
T2+ G+
T2+ G-
T2- G-
T2- G+
BT136X-
BT136X-
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
T2
-600
600
MAX.
600F
600
600
25
1
4
MAX.
Product specification
BT136X series
150
125
3.1
0.5
25
27
50
50
50
10
4
2
5
5
-800
800
MAX.
800
800
25
4
Rev 1.400
UNIT
G
A/ s
A/ s
A/ s
A/ s
UNIT
T1
A
˚C
˚C
W
W
V
A
A
A
A
V
2
V
A
A
s

Related parts for BT136X-600F

Image
Part Number
Description
Manufacturer
Datasheet
Request R
BT136X-800E
Part Number:
BT136X-800E
Description:
Triacs RAIL TRIAC
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600E127.pdf (6 pages)
BT136X-600E
Part Number:
BT136X-600E
Description:
Triacs RAIL TRIAC
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600E127.pdf (6 pages)
BT136X-600D
Part Number:
BT136X-600D
Description:
Triacs RAIL TRIAC
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600D.pdf (6 pages)
BT136X-600
Part Number:
BT136X-600
Description:
Triacs RAIL TRIAC
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600127.pdf (7 pages)
BT136X-800
Part Number:
BT136X-800
Description:
Triacs 800V 4A
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600127.pdf (7 pages)
BT136X-600,127
Part Number:
BT136X-600,127
Description:
TRIAC 600V 4A SOT186A
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600127.pdf (7 pages)
BT136X-600D,127
Part Number:
BT136X-600D,127
Description:
TRIAC 600V 4A SOT186A
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600D127.pdf (6 pages)
BT136X-600E,127
Part Number:
BT136X-600E,127
Description:
TRIAC 600V 4A SOT186A
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600E127.pdf (6 pages)
BT136X-600F,127
Part Number:
BT136X-600F,127
Description:
TRIAC 600V 4A SOT186A
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600127.pdf (7 pages)
BT136X-800,127
Part Number:
BT136X-800,127
Description:
TRIAC 800V 4A SOT186A
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600127.pdf (7 pages)
BT136X-800E,127
Part Number:
BT136X-800E,127
Description:
TRIAC 800V 4A SOT186A
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600E127.pdf (6 pages)
BT136X-600E/DG,127
Part Number:
BT136X-600E/DG,127
Description:
Triacs 4Q TRIAC
Manufacturer:
NXP Semiconductors
Datasheet:
BT136X-600EDG127.pdf (8 pages)
LPC2420_60
Part Number:
LPC2420_60
Description:
NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2420_60.pdf (86 pages)
LPC2458
Part Number:
LPC2458
Description:
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2458.pdf (80 pages)
LPC2468
Part Number:
LPC2468
Description:
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2468.pdf (85 pages)

BT136X-600F Summary of contents

Page 1

... T 92 ˚C hs full sine wave ˚C prior to j surge 16 0 / T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period 1 Product specification BT136X series MAX. MAX. UNIT BT136X- 600 800 BT136X- 600F 600 800 SYMBOL T2 G MIN. MAX. UNIT -600 -800 1 - ...

Page 2

... CONDITIONS MIN. BT136X 400 0 125 ˚ DRM(max 125 ˚ Product specification BT136X series MIN. TYP. MAX. UNIT - - 2500 MIN. TYP. MAX. UNIT - - 5.5 K 7.2 K K/W TYP. MAX. UNIT ... ... ...

Page 3

... Gate controlled turn-on gt time June 2001 CONDITIONS BT136X- ... 100 DM DRM(max 125 ˚C; exponential j waveform; gate open circuit V = 400 ˚ T(RMS) dI /dt = 1.8 A/ms; gate com open circuit DRM(max 0 / Product specification BT136X series MIN. TYP. MAX. UNIT ...F 50 250 - Rev 1.400 s ...

Page 4

... I p 20ms. VGT(25 C) 1.6 I TSM 1.4 time T 1.2 1 0.8 0.6 0.4 1000 - Product specification BT136X series BT136X 100 Ths / C versus heatsink temperature T hs 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 92˚C. hs VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...

Page 5

... I (25˚C), Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dI j should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dI 5 Product specification BT136X series typ max 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms ...

Page 6

... Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". June 2001 10.3 max 3.2 3.0 2.8 seating 15.8 19 max. max. plane 3 2 2.54 0.5 5.08 6 Product specification BT136X series 4.6 max 2.9 max 6.4 15.8 max 0.6 2.5 1.3 Rev 1.400 1.0 (2x) 0.9 0.7 ...

Page 7

... This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A 7 Product specification BT136X series Rev 1.400 ...

Related keywords