BT139-600 NXP Semiconductors, BT139-600 Datasheet - Page 6

• Manufacturer Part Number: BT139-600
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT139-600

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 170 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 70 mA
• Holding Current (ih Max): 45 mA
• Forward Voltage Drop: 1.6 V @ 20A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT139-600,127

Philips Semiconductors
Table 5:
T
7. Dynamic characteristics
Table 6:
9397 750 13358
Product data sheet
Symbol
V
I
Symbol
dV
dV
t
D
gt
j
GT
= 25 C unless otherwise stated.
D
com
/dt
/dt
Static characteristics
Parameter
gate trigger
voltage
off-state
leakage current
Dynamic characteristics
Parameter
critical rate of
rise of off-state
voltage
critical rate of
change of
commutating
voltage
gate controlled
turn-on time
Conditions
V
V
T
exponential
waveform; gate
open circuit
V
T
I
dI
gate open circuit
I
V
I
dI
T(RMS)
TM
G
Conditions
V
I
Figure 7
V
I
T
V
T
j
j
DM
DRM(max)
DM
D
T
T
com
G
= 125 C;
= 95 C;
j
j
= 0.1 A;
D
D
D
/dt = 5 A/ s
= V
= 0.1 A;
= 0.1 A;
= 125 C
= 125 C
= 20 A;
= 12 V;
= 400 V;
= V
= 67 %
= 400 V;
/dt = 7.2 A/ms;
…continued
DRM(max)
= 16 A;
DRM(max)
;
;
;
Rev. 04.00 — 6 July 2004
-
0.25
-
Min Typ
200 250
10
Min Typ
BT139
0.7
0.4
0.1
BT139
20
2
1.5
-
0.5
Max
-
-
-
Max
-
0.25
-
50
-
-
Min Typ
Min Typ
BT139-F
BT139-F
0.7
0.4
0.1
250
20
2
1.5
-
0.5
Max
-
-
-
Max
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT139 series
-
0.25
-
Min Typ
200
10
Min Typ
BT139-G
BT139-G
0.7
0.4
0.1
250
20
2
1.5
-
0.5
Max
-
-
-
Max
Unit
V
V
mA
Triacs
Unit
V/ s
V/ s
6 of 12
s