BT236X-800G NXP Semiconductors, BT236X-800G Datasheet - Page 7

• Manufacturer Part Number: BT236X-800G
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BT236X-800G

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 71 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 40 mA
• Forward Voltage Drop: 1.65 V @ 10 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT236X-800G,127

Philips Semiconductors
8. Dynamic characteristics
Table 7:
BT236X_SER_F_G_2
Product data sheet
Symbol Parameter
dV
dV
t
gt
Fig 7. Normalized gate trigger voltage as a function of
V
D
com
GT(25 C)
/dt
V
GT
/dt rate of
1.6
1.2
0.8
0.4
junction temperature
50
rate of rise of
off-state
voltage
change of
commutating
voltage
gate-
controlled
turn-on time
Dynamic characteristics
0
Conditions
V
T
exponential waveform;
gate open circuit
V
T
I
dI
gate open circuit; see
Figure 12
I
V
I
dI
T(RMS)
TM
G
j
j
DM
DM
D
com
G
= 125 C;
= 95 C;
= 0.1 A;
/dt = 5 A/ s
= V
= 12 A;
50
= 0.67V
= 400 V;
/dt = 3.6 A/ms;
DRM(max)
= 6 A;
DRM(max)
100
;
001aab101
T
j
( C)
;
150
Rev. 02 — 14 March 2006
100
-
-
Min
BT236X-600
BT236X-800
250
20
2
Typ
Fig 8. Normalized gate trigger current as a function of
I
GT(25 C)
I
(1) T2 G
(2) T2+G
(3) T2+ G+
(4) T2 G+
GT
-
-
-
Max
BT236X series F and G
3
2
1
0
junction temperature
50
50
-
-
Min
BT236X-600F
0
250
20
2
(1)
(2)
(3)
(4)
Typ
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
-
-
-
Max
50
6 A Four-quadrant triacs
200
10
-
Min
BT236X-600G
BT236X-800G
100
250
20
2
Typ
001aae042
T
j
( C)
(3)
(4)
(2)
(1)
150
-
-
-
Max
7 of 12
Unit
V/ s
V/ s
s