BTA416Y-600C NXP Semiconductors, BTA416Y-600C Datasheet - Page 6

• Manufacturer Part Number: BTA416Y-600C
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA416Y-600C

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 176 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 35 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA416Y-600C,127

NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Isolation characteristics
Table 6.
BTA416Y-600C
Product data sheet
Symbol
R
R
Symbol
V
C
Fig 6.
isol(RMS)
th(j-mb)
th(j-a)
isol
Z
(K/W)
th(j-mb)
10
10
10
10
1
1
2
3
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
5
Thermal characteristics
Isolation characteristics
Parameter
RMS isolation voltage
isolation capacitance
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
10
4
Conditions
from all terminals to external heatsink;
sinusoidal waveform; clean and dust free ;
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; T
from main terminal 2 to external heatsink ;
f = 1 MHz; T
All information provided in this document is subject to legal disclaimers.
10
3
mb
Rev. 3 — 23 June 2011
= 25 °C
10
Conditions
full cycle; see
in free air
2
mb
= 25 °C
Figure 6
10
1
BTA416Y-600C
Min
-
-
Min
-
-
1
P
Typ
-
60
Typ
-
10
t
p
© NXP B.V. 2011. All rights reserved.
t
p
3Q Hi-Com Triac
(s)
003aab821
Max
1.9
-
Max
2500
-
t
10
Unit
K/W
K/W
Unit
V
pF
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