BTA312X-600E NXP Semiconductors, BTA312X-600E Datasheet - Page 4

• Manufacturer Part Number: BTA312X-600E
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA312X-600E

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.6 V @ 15 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA312X-600E,127

NXP Semiconductors
BTA312X_SER_D_E_1
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
(A)
(1) dI
I
TSM
(A)
10
10
10
80
70
60
50
40
30
20
10
3
2
0
10
t
10
f = 50 Hz
T
duration; maximum values
p
h
T
-5
-2
/dt limit
= 61 C
20 ms
10
(1)
-1
10
-4
1
surge duration (s)
003aab681
10
Rev. 01 — 16 April 2007
10
-3
Fig 5. RMS on-state current as a function of heatsink
BTA312X series D and E
I
T(RMS)
(A)
12 A Three-quadrant triacs high commutation
15
10
5
0
temperature; maximum values
-50
0
10
-2
50
I
T
T
j(init)
= 25 C max
t
p
100
t
p
© NXP B.V. 2007. All rights reserved.
(s)
003aab691
003aab679
T
I
h
TSM
( C)
t
10
150
-1
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