BT139B-800E /T3 NXP Semiconductors, BT139B-800E /T3 Datasheet - Page 6
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BT139B-800E /T3
Manufacturer Part Number
BT139B-800E /T3
Description
Triacs TAPE13 TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BT139B-800E118.pdf
(14 pages)
Specifications of BT139B-800E /T3
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
170 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
25 mA
Holding Current (ih Max)
45 mA
Forward Voltage Drop
1.6 V @ 20 A
Mounting Style
SMD/SMT
Package / Case
SOT-404
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT139B-800E,118
NXP Semiconductors
5. Thermal characteristics
Table 5.
BT139B-800E
Product data sheet
Symbol
R
R
Fig 6.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
10
1
1
2
3
10
Transient thermal impedance from junction to mounting base as a function of pulse width
5
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
10
4
Conditions
half cycle; see
full cycle; see
minimum footprint; FR4 board
All information provided in this document is subject to legal disclaimers.
10
3
Rev. 4 — 22 March 2011
Figure 6
Figure 6
10
2
10
1
(1)
(2)
Min
-
-
-
BT139B-800E
P
D
1
Typ
-
-
55
t
p
t
p
© NXP B.V. 2011. All rights reserved.
(s)
001aab098
Max
1.7
1.2
-
t
10
4Q Triac
Unit
K/W
K/W
K/W
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