2N6073B ON Semiconductor, 2N6073B Datasheet - Page 6

• Manufacturer Part Number: 2N6073B
• Description: Triacs THY 4A 400V TRIAC
• Manufacturer: ON Semiconductor

Specifications of 2N6073B

• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Breakover Current Ibo Max: 30 A
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 2 V @ 6 A
• Mounting Style: Through Hole
• Package / Case: TO-225-3
• Repetitive Peak Forward Blocking Voltage: 400 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
40
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
10
0.1
0
Figure 7. Maximum On-State Characteristics
0.2
T
J
= 110 C
1.0
V
0.5
TM
T
, ON‐STATE VOLTAGE (VOLTS)
J
= 25 C
2.0
1.0
2.0
3.0
5.0
4.0
2N6071A/B Series
10
Figure 10. Thermal Response
http://onsemi.com
20
5.0
t, TIME (ms)
6
3.0
2.0
1.0
0.7
0.5
0.3
34
32
30
28
26
24
22
20
18
16
14
-60
1.0
50
-40
Figure 9. Maximum Allowable Surge Current
T
100
f = 60 Hz
J
= -40 to +110 C
-20
Figure 8. Typical Holding Current
T
200
J
, JUNCTION TEMPERATURE ( C)
2.0
0
NUMBER OF FULL CYCLES
20
500
3.0
40
GATE OPEN
APPLIES TO EITHER DIRECTION
1.0 k
60
4.0
MAXIMUM
TYPICAL
80
5.0
2.0 k
100
7.0
5.0 k
120
10
140
10 k