MCR72-003 ON Semiconductor, MCR72-003 Datasheet - Page 4

• Manufacturer Part Number: MCR72-003
• Description: SCRs 100V 8A
• Manufacturer: ON Semiconductor

Specifications of MCR72-003

• Breakover Current Ibo Max: 100 A
• Rated Repetitive Off-state Voltage Vdrm: 100 V
• Off-state Leakage Current @ Vdrm Idrm: 0.01 mA
• Forward Voltage Drop: 2 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 6 mA
• Mounting Style: Through Hole
• Package / Case: TO-220-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
110
3.0
2.0
1.0
0.5
0.3
90
80
70
Symbol
V
I
V
I
V
I
DRM
RRM
H
-40
DRM
RRM
TM
0
-20
Figure 1. Average Current Derating
Figure 3. Normalized Gate Current
I
T(AV)
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
0
= 30
2.0
, AVERAGE ON‐STATE CURRENT (AMP)
T
J
, JUNCTION TEMPERATURE ( C)
20
60
40
90
4.0
60
180
80
Voltage Current Characteristic of SCR
= Conduction Angle
V
D
90
= 12 Vdc
6.0
100
http://onsemi.com
dc
120
8.0
140
4
I
Reverse Avalanche Region
Anode −
RRM
Reverse Blocking Region
0.7
0.6
0.5
0.4
0.3
0.2
0.1
at V
8.0
4.0
16
12
-60
0
RRM
(off state)
0
-40
= Conduction Angle
Figure 2. On−State Power Dissipation
-20
on state
I
T(AV)
= 30
T
2.0
J
, AVERAGE ON‐STATE CURRENT (AMP)
, JUNCTION TEMPERATURE ( C)
Figure 4. Gate Voltage
+ Current
0
60
20
Forward Blocking Region
I
90
H
40
4.0
V
TM
(off state)
60
I
DRM
V
180
D
80
= 12 Vdc
Anode +
at V
6.0
DRM
100
+ Voltage
120
dc
8.0