TGF2022-48 TriQuint, TGF2022-48 Datasheet - Page 2

• Manufacturer Part Number: TGF2022-48
• Description: RF GaAs DC-20GHz 4.8mm Pwr pHEMT (0.35um)
• Manufacturer: TriQuint

Specifications of TGF2022-48

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1031682

TriQuint Semiconductor Texas: Phone [phone] Fax [phone] [e-mail] www.triquint.com
1/
2/
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Symbol
| I
T
Symbol
T
Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
P
P
T
V
V
These ratings represent the maximum operable values for this device.
Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
Junction operating temperature will directly affect the device median time to failure
(T
at the lowest possible levels.
I
STG
CH
G
V
V
+
Idss
IN
M
D
Gm
+
-
V
BGS
BGD
For a median life time of 1E+6 hrs, Power dissipation is limited to:
M
|
P
). For maximum life, it is recommended that junction temperatures be maintained
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
P
Saturated Drain Current
D
Breakdown Voltage
Breakdown Voltage
(max) = (150 °C – TBASE °C) / 17.3 (°C/W)
Transconductance
Pinch-off Voltage
D
.
Gate-Source
Parameter
Gate-Drain
DC PROBE CHARACTERISTICS
Parameter 1/
(T
A
MAXIMUM RATINGS
= 25 °C, Nominal)
TABLE II
Minimum
TABLE I
-1.5
-30
-30
-
-
Typical
1440
1800
-1
-
-
-65 to 150 °C
See note 3
-5V to 0V
2250 mA
32 dBm
Maximum
150 °C
320 °C
Value
12.5 V
56 mA
Product Datasheet
-0.5
-14
-8
-
-
TGF2022-48
September 7, 2007
Unit
mA
mS
V
V
V
Notes
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Rev -
2