TGF4250-SCC TriQuint, TGF4250-SCC Datasheet

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TGF4250-SCC

Manufacturer Part Number
TGF4250-SCC
Description
RF GaAs DC-10.5GHz 2.5 Watt HFET
Manufacturer
TriQuint
Datasheet
1.TGF4250-SCC.pdf (9 pages)

Specifications of TGF4250-SCC

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1004314

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
TGF4250-SCC
Manufacturer:
Triquint
Quantity:
1 400
DC - 10.5 GHz Discrete HFET
Description
The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure
Field Effect Transistor (HFET) designed for high efficiency power applications up to
10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34
dBm power output, 13 dB gain, and 53% PAE.
Bond pad and backside metallization is gold plated for compatibility with eutectic
alloy attach methods as well as thermocompression and thermosonic wire bonding
processes. The TGF4250-SCC is readily assembled using automatic equipment.
For an Application Note on the use of HFETs, refer to the TriQuint website for the
Millimeter Wave Division.
TriQuint Semiconductor Texas : (972)994 8465
Key Features and Performance
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Primary Applications
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Fax: (972)994 8504 Web: www.triquint.com
Nominal Pout of 34 dBm at 8.5 GHz
Nominal Gain of 8.5 dB at 8.5 GHz
Nominal PAE of 53% at 8.5 GHz
Suitable for high reliability applications
4800 µm x 0.5 µm FET
Chip dimensions: 0.61 x 1.37 x 0.1 mm
(0.024 x 0.054 x 0.004 in)
Bias at 8 Volts, 384 mA
Cellular Base Stations
High-reliability space
Military
Product Data Sheet
December 16, 2002
TGF4250-SCC
1

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TGF4250-SCC Summary of contents

Page 1

... DC - 10.5 GHz Discrete HFET Description The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output gain, and 53% PAE. ...

Page 2

... These ratings apply to each individual FET 3/ TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet TABLE I MAXIMUM RATINGS VALUE 0 to -5.0 Volts See Thermal Data -65 to 200°C Fax: (972)994 8504 Web: www.triquint.com December 16, 2002 TGF4250-SCC NOTES 12 V 2/, 3/ 150°C 320°C 2 ...

Page 3

... HFET IQ is 384 mA. TriQuint Semiconductor Texas : (972)994 8465 TABLE II DC PROBE CHARACTERISTICS = 25 °C, Nominal Minimum Typical -- 1176 -- 792 1 1. are negative III TIC ° inal Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet December 16, 2002 TGF4250-SCC Maximum Unit Note -- ypical 8 ...

Page 4

... TYPICAL PERFORMANCE TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet December 16, 2002 TGF4250-SCC Fax: (972)994 8504 Web: www.triquint.com T =25° ...

Page 5

... TYPICAL PERFORMANCE TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet December 16, 2002 TGF4250-SCC Fax: (972)994 8504 Web: www.triquint.com 5 ...

Page 6

... THERMAL INFORMATION TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet December 16, 2002 TGF4250-SCC Fax: (972)994 8504 Web: www.triquint.com 6 ...

Page 7

... TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet December 16, 2002 TGF4250-SCC Fax: (972)994 8504 Web: www.triquint.com 7 ...

Page 8

... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Mechanical Drawing * * ** ** Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet December 16, 2002 TGF4250-SCC 8 ...

Page 9

... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Die are shipped in gel pack unless otherwise specified. TriQuint Semiconductor Texas : (972)994 8465 Assembly Process Notes Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet December 16, 2002 TGF4250-SCC 9 ...

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