TGF4124 TriQuint, TGF4124 Datasheet - Page 5

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TGF4124

Manufacturer Part Number
TGF4124
Description
RF GaAs DC-4.0GHz 10 Watt HFET
Manufacturer
TriQuint
Datasheet

Specifications of TGF4124

Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1055832

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGF4124
Manufacturer:
RadantMEMS
Quantity:
1 400
Part Number:
TGF4124-EPU
Manufacturer:
Triquint
Quantity:
1 400
TriQuint Semiconductor Texas Phone: 972 994-8465
IDSS
GM
VP
BVGS
BVGD
Absolute Maximum Ratings
Drain-to-source Voltage, Vds..............................… … … … … … … … … … … … … … … … ..........12 V
Gate-to-source Voltage, Vgs..................… … … … … … … … … … … … … … … … .............-5 V to 0 V
Mounting Temperature.................… … … … … … … … … … … … … … … .… .........… … … … … … 320°C
Storage Temperature.....................… … … … … … … … … … … … … … .… .............… -65°C to 200°C
Power Dissipation...........… … … … … .… … … … … … … … … … … … … … … ...refer to Thermal Model
Operating Channel Temperature… … … … … … … … … … … … … … … … ..… .refer to Thermal Model
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated in this document is not implied. Exposure to absolute maximum rated conditions for extended
periods of time may affect device reliability.
6 0 0 0
5 5 0 0
5 0 0 0
4 5 0 0
4 0 0 0
3 5 0 0
3 0 0 0
2 5 0 0
2 0 0 0
1 5 0 0
1 0 0 0
5 0 0
DC Characteristics for the TGF4124-EPU
0
0
DC probe Parameters
Drain Saturation Current
Transconductance
Pinch Off Voltage
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Drain
Vg = 0.0 V to -2.75 V in 0.25 steps T
1
2
Example of DC I-V Curves
3
D r a in V o l t a g e ( V )
Fax 972 994-8504
4
5
6
Nominal
A
-1.85
5880
3960
= 25 C
-22
-22
7
Web: www.triquint.com
Unit
8
mA
mS
V
V
V
9
5

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