MBRF20100CTG ON Semiconductor, MBRF20100CTG Datasheet - Page 2

• Manufacturer Part Number: MBRF20100CTG
• Description: DIODE SCHOTTKY 100V 10A TO220FP
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MBRF20100CTG

• Voltage - Forward (vf) (max) @ If: 850mV @ 10A
• Current - Reverse Leakage @ Vr: 150µA @ 100V
• Current - Average Rectified (io) (per Diode): 10A
• Voltage - Dc Reverse (vr) (max): 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Rectifier Type: Schottky Diode
• Configuration: Dual Common Cathode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 20A
• Rev Curr: 150uA
• Peak Non-repetitive Surge Current (max): 150A
• Forward Voltage: 0.95V
• Operating Temp Range: -65C to 175C
• Package Type: TO-220 Full-Pak
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Compliant
• Other names: MBRF20100CTGOS

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dP
2. Proper strike and creepage distance must be provided.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
Non-repetitive Peak Surge Current
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
Operating Junction and Storage Temperature Range (Note 1)
Voltage Rate of Change (Rated V
RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, T
Maximum Thermal Resistance, Junction to Case
Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds
Maximum Instantaneous Forward Voltage (Note 3)
Maximum Instantaneous Reverse Current (Note 3)
5.0
3.0
1.0
0.5
50
20
10
(Rated V
(Rated V
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
(i
(i
(i
(i
(Rated DC Voltage, T
(Rated DC Voltage, T
F
F
F
F
0
Working Peak Reverse Voltage
DC Blocking Voltage
= 10 Amp, T
= 10 Amp, T
= 20 Amp, T
= 20 Amp, T
Figure 1. Typical Forward Voltage Per Diode
0.1
R
R
), T
, Square Wave, 20 kHz), T
0.2
C
v
C
C
C
C
= 133°C
F
, INSTANTANEOUS VOLTAGE (VOLTS)
= 25°C)
= 125°C)
= 25°C)
= 125°C)
0.3
(Per Leg)
C
C
= 25°C)
= 125°C)
0.4
150°C
R
0.5
)
(Per Leg)
Characteristic
C
(Per Leg)
0.6
= 133°C
Rating
Rating
0.7
T
J
100°C
= 25°C
0.8
A
= 25°C) (Note 2)
http://onsemi.com
MBRF20100CT
0.9
1.0
2
0.01
1.0
0.1
10
0
Total Device
Figure 2. Typical Reverse Current Per Diode
Per Figure 3
20
T
T
T
J
J
J
= 150°C
= 125°C
= 100°C
T
J
= 25°C
40
V
R
, REVERSE VOLTAGE (VOLTS)
D
/dT
Symbol
Symbol
Symbol
T
V
V
I
I
dv/dt
V
R
I
I
J
F(AV)
FRM
RRM
RWM
FSM
J
RRM
V
, T
T
v
iso1
i
qJC
60
R
R
F
< 1/R
L
stg
qJA
80
.
- 65 to +175
10000
Value
Value
4500
Max
0.85
0.75
0.95
0.85
0.15
100
150
260
150
0.5
3.5
10
20
20
100
120
°C/W
V/ms
Unit
Unit
Unit
mA
°C
°C
V
A
A
A
A
V
V