NE664M04-T2 CEL, NE664M04-T2 Datasheet - Page 5

• Manufacturer Part Number: NE664M04-T2
• Description: RF Bipolar Small Signal NPN High Frequency
• Manufacturer: CEL

Specifications of NE664M04-T2

• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.5 A
• Power Dissipation: 735 mW
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
30
25
20
15
10
30
25
20
15
10
30
25
20
15
10
5
0
5
0
-10
5
0
-15
-10
V
I
V
I
V
I
Cq
Cq
Cq
CE
CE
CE
G
= 20 mA, 1/2 Duty
= 4 mA, 1/2 Duty
G
= 4 mA, 1/2 Duty
G
= 3.2 V, f = 0.9 GHz
P
= 3.2 V, f = 1.8 GHz
= 3.6 V, f = 1.8 GHz
P
P
-10
& COLLECTOR EFFICIENCY
& COLLECTOR EFFICIENCY
-5
-5
& COLLECTOR EFFICIENCY
Input Power, P
Input Power, P
Input Power, P
vs. INPUT POWER
vs. INPUT POWER
vs. INPUT POWER
-5
0
0
0
5
5
P
P
P
η
in
in
out
in
out
η
out
η
c
c
(dBm)
c
(dBm)
(dBm)
10
10
5
15
10
15
I
C
I
I
C
20
C
15
20
300
250
200
150
100
50
0
250
200
150
100
50
0
250
200
150
100
50
0
300
300
(T
A
= 25°C)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT,
30
25
20
15
10
30
25
20
15
10
30
25
20
15
10
5
0
5
0
5
0
-10
-5
-10
V
I
V
I
Cq
Cq
V
I
CE
Cq
CE
G
G
CE
G
= 20 mA, 1/2 Duty
= 20 mA, 1/2 Duty
P
= 20 mA, 1/2 Duty
P
= 3.2 V, f = 1.8 GHz
= 3.2 V, f = 2.4 GHz
& COLLECTOR EFFICIENCY
& COLLECTOR EFFICIENCY
= 3.6 V, f = 1.8 GHz
P
& COLLECTOR EFFICIENCY
-5
-5
0
Input Power, P
Input Power, P
vs. INPUT POWER
Input Power, P
vs. INPUT POWER
vs. INPUT POWER
0
5
0
10
5
5
P
P
P
out
η
in
out
in
out
η
in
η
c
c
(dBm)
c
(dBm)
15
10
10
(dBm)
I
C
15
15
20
I
C
I
C
20
25
20
250
200
150
100
50
0
300
250
200
150
100
50
0
300
250
200
150
100
50
0
300