AGR09130EF TriQuint, AGR09130EF Datasheet - Page 5

• Manufacturer Part Number: AGR09130EF
• Description: RF MOSFET Power RF Transistor
• Manufacturer: TriQuint

Specifications of AGR09130EF

• Minimum Operating Temperature: - 65 C
• Product Type: RF MOSFET Power
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, + 15 V
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 200 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Characteristics
18.5
17.5
16.5
15.5
14.5
19
18
17
16
15
14
920
200
180
160
140
120
100
80
60
40
20
0
0.00
925
Figure 5. Power Gain and Return Loss vs. Frequency
V
0.50
DD
Figure 4. P
= 26 V, I
130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET
930
1.00
V
DD
960 MHz
DQ
= 26 V, I
INPUT POWER (P
P
OUT
= 1.0 A, T
935
G
FREQUENCY
1.50
@ P
and Drain Efficiency vs. P
(continued)
DQ
OUT
2.00
= 1.0 A, T
940
P
F
= 50 W
OUT
= 30 °C, FORMAT = CW.
920 MHz
R
(MHz)Z
L
940 MHz
IN
P
2.50
G
)
945
F
(W)Z
@ P
P
= 30 °C.
IN
OUT
3.00
950
920 MHz
940 MHz
960 MHz
= 130 W
IN
3.50
955
4.00
200
180
160
140
120
100
80
60
40
20
0
960
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20