NE02133-T1B-R3 CEL, NE02133-T1B-R3 Datasheet - Page 2

• Manufacturer Part Number: NE02133-T1B-R3
• Description: RF Bipolar Small Signal NPN High Frequency
• Manufacturer: CEL

Specifications of NE02133-T1B-R3

• Mounting Style: SMD/SMT
• Configuration: Single
• Transistor Polarity: NPN
• Continuous Collector Current: 0.07 A
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. Electronic Industrial Association of Japan.
3. Common base electrical charactristics see S-Parameters.
5. Minimum dissipations based on R
ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SYMBOLS
SYMBOLS
R
R
|S
R
R
effective heat sink.
NF
heat sink, maximum dissipations based on R
|S
NF
TH (J-C)
TH (J-A)
I
I
C
TH (J-C)
h
P
TH (J-A)
21
CBO
EBO
I
I
C
P
h
f
CBO
EBO
21E
FE
CB
T
T 5
f
MIN
FE
|
CB
T 5
T
MIN
2
|
2
Gain Bandwidth Product at V
Insertion Power Gain at V
f = 0.5 GHz
f = 1 GHz
f = 2 GHz
Minimum Noise Figure
V
V
Collector Cutoff Current at V
Emitter Cutoff Current at V
Forward Current Gain at V
Collector to Base Capacitance
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient)
Total Power Dissipation
Gain Bandwidth Product at V
I
Insertion Power Gain at
V
f = 0.5 GHz
f = 1 GHz
f = 2 GHz
Minimum Noise Figure
V
f = 0.5 GHz
V
f = 1 GHz
f = 2 GHz
Collector Cutoff Current at V
I
Emitter Cutoff Current at V
Forward Current Gain at
Collector to Base Capacitance
V
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient)
Total Power Dissipation
PARAMETERS AND CONDITIONS
C
E
I
V
CE
CE
C
CE
CE
CE
CB
CE
= 20 mA
= 0
= 0
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
PARAMETERS AND CONDITIONS
EIAJ
EIAJ
C
C
C
C
C
E
C
= 3 mA, f = 0.5 GHz
= 5 mA, f = 2 GHz
PACKAGE OUTLINE
= 0 , f = 1 MHz
= 20 mA,
= 3 mA,
= 5 mA,
= 20 mA
1
REGISTERED NUMBER
1
PACKAGE OUTLINE
PART NUMBER
REGISTERED NUMBER
PART NUMBER
TH (J-A)
2
6
at
at
CE
CE
EB
EB
CB
= 10 V, I
CE
CB
for applications without effective
= 2 V, I
= 10 V, I
CE
4
= 2 V,
4
at V
= 15 V, I
= 10 V, I
= 15 V,
at
= 10 V,
TH (J-C)
CB
C
C
C
= 10 V, I
= 0
= 20 mA,
E
= 20 mA
for applications with
(T
C
(T
= 0
= 20 mA
A
A
= 25°C)
= 25°C)
E
= 0, f = 1 MHz
UNITS
°C/W
°C/W
mW
GHz
UNITS
dB
dB
dB
dB
dB
dB
pF
µA
µA
2. Input and output are tuned for optimum noise figures.
4. C
6. Output and Input are tuned for minimum noise figure.
°C/W
°C/W
GHz
mW
dB
dB
dB
dB
µA
µA
dB
pF
CB
incorporating a guard circuit. The emitter terminal shall be
connected to the guard terminal.
measurement employs a three-terminal capacitance bridge
MIN TYP MAX MIN
40
MIN
580
5.5
9
4
20
NE02133
2SC2351
0.75
4.5
1.5
33
15
10
70
5
00 (CHIP)
NE02100
TYP
18.5
4.5
6.5
1.5
2.7
0.6
13
70
200
666
150
1.0
1.0
1.0
3
290
20
MAX
250
700
4.5
1.0
1.0
1.0
5
70
NE02135
2SC2149
TYP MAX MIN
18.5
4.5
5.7
1.5
2.7
0.6
35
13
70
MIN
350
5.5
20
250
120
600
500
4.0
1.0
1.0
1.0
NE02107
07/07B
40
TYP
18.5
9
4.5
6.5
1.5
2.7
0.6
13
70
NE02139
2SC4092
3
TYP MAX
4.5
1.5
.75
39
10
70
MAX
250
500
700
4.5
1.0
1.0
1.0
90
200
500
200
1.0
1.0