BLF6G38-10G NXP Semiconductors, BLF6G38-10G Datasheet - Page 7

• Manufacturer Part Number: BLF6G38-10G
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-10G

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.1 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 3.1A
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-10G,112

NXP Semiconductors
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Fig 8.
(dB)
G
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
p
20
18
16
14
12
10
10
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Power gain as a function of load power;
typical values
DS
1
= 28 V; I
Dq
= 130 mA; single carrier IS-95;
1
(2)
(3)
(1)
P
L
(W)
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BLF6G38-10; BLF6G38-10G
Fig 9.
(W)
P
(1) f = 3400 MHz
(2) f = 3500 MHz
(3) f = 3600 MHz
0.20
0.16
0.12
0.08
0.04
i
0
10
V
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
Input power as a function of load power;
typical values
1
DS
= 28 V; I
Dq
WiMAX power LDMOS transistor
= 130 mA; single carrier IS-95;
1
(3)
(2)
(1)
P
L
(W)
© NXP B.V. 2009. All rights reserved.
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