BLF6G38-10G /T3 NXP Semiconductors, BLF6G38-10G /T3 Datasheet - Page 5
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BLF6G38-10G /T3
Manufacturer Part Number
BLF6G38-10G /T3
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G38-10G118.pdf
(15 pages)
Specifications of BLF6G38-10G /T3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.256 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
3.1 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
2W(Typ)
Power Gain (typ)@vds
14@28VdB
Frequency (min)
3.4GHz
Frequency (max)
3.6GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
0.8(Min)S
Drain Source Resistance (max)
1256@6.15Vmohm
Reverse Capacitance (typ)
3.6@28VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
20%
Mounting
Surface Mount
Mode Of Operation
1-Carrier N-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G38-10G,118
NXP Semiconductors
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Fig 1.
Fig 3.
EVM
(%)
12
8
4
0
10
V
EVM as a function of load power;
typical values
V
Adjacent channel power ratio as a function of average load power; typical values
DS
DS
1
= 28 V; I
= 28 V; I
7.2.2 Graphs
Dq
Dq
= 130 mA; f = 3500 MHz.
= 130 mA; f = 3500 MHz.
1
ACPR
(dBc)
P
20
30
40
50
60
L
10
(W)
1
001aaj362
Rev. 01 — 3 February 2009
10
BLF6G38-10; BLF6G38-10G
1
Fig 2.
(dB)
G
P
L(AV)
p
20
18
16
14
12
10
10
ACPR
ACPR
ACPR
V
Power gain and drain efficiency as function of
average load power; typical values
(W)
1
DS
001aaj364
= 28 V; I
10M
20M
30M
10
G
D
p
Dq
WiMAX power LDMOS transistor
= 130 mA; f = 3500 MHz.
1
P
L(AV)
© NXP B.V. 2009. All rights reserved.
(W)
001aaj363
10
50
40
30
20
10
0
(%)
D
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