BLF6G20-45 /T3 NXP Semiconductors, BLF6G20-45 /T3 Datasheet - Page 7

• Manufacturer Part Number: BLF6G20-45 /T3
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G20-45 /T3

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 19.2@28VdB
• Frequency (min): 1.805GHz
• Frequency (max): 2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 14%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G20-45,135

NXP Semiconductors
Table 8.
For test circuit, see
[1]
[2]
BLF6G20-45_BLF6G20S-45_2
Product data sheet
Component
C1
C2
C3, C13
C4, C5
C6, C10
C7
C8, C9
C11
C12
C14
C15, C16
R1
American technical ceramics type 100B or capacitor of same quality.
American technical ceramics type 100A or capacitor of same quality.
List of components
Figure 6
and
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
tantalum capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
Philips electrolytic capacitor
multilayer ceramic chip capacitor
Philips chip resistor
Figure
7.
Rev. 02 — 25 August 2008
BLF6G20-45; BLF6G20S-45
Value
0.7 pF
3.9 pF
10 F
1.5 F
10 pF
1.2 pF
100 nF
220 nF
4.7 F
220 F, 63 V
6.8 pF
5.6
Power LDMOS transistor
© NXP B.V. 2008. All rights reserved.
[1]
[1]
[1]
[1]
[2]
Remarks
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